Upregulation of chondroitin 6-sulphotransferase-1 facilities Schwann cell migration during axonal growth

Cell migration is central to development and posttraumatic regeneration. The differential increase in 6-sulphated chondroitins during axonal growth in both crushed sciatic nerves and brain development suggests that chondroitin 6-sulphotransferase-1 (C6ST-1) is a key enzyme that mediates cell migration in the process. We have cloned the cDNA of the C6ST-1 gene (C6st1) (GenBank accession number AF178689) from crushed sciatic nerves of adult rats and produced ribonucleotide probes accordingly to track signs of 6-sulphated chondroitins at the site of injury. We found C6st1 mRNA expression in Schwann cells emigrating from explants of both sciatic nerve segments and embryonic dorsal root ganglia. Immunocytochemistry indicated pericellular 6-sulphated chondroitin products around C6ST-1-expressing frontier cells. Motility analysis of frontier cells in cultures subjected to staged treatment with chondroitinase ABC indicated that freshly produced 6-sulphated chondroitin moieties facilitated Schwann cell motility, unlike restrictions resulting from proteoglycan interaction with matrix components. Sciatic nerve crush provided further evidence of in vivo upregulation of the C6ST-1 gene in mobile Schwann cells that guided axonal regrowth 1-14 days post crush; downregulation then accompanied declining mobility of Schwann cells as they engaged in the myelination of re-growing axons. These findings are the first to identify upregulated C6st1 gene expression correlating with the motility of Schwann cells that guide growing axons through both developmental and injured environments.published_or_final_versio

High Fidelity Tape Transfer Printing Based On Chemically Induced Adhesive Strength Modulation

Transfer printing, a two-step process (i.e. picking up and printing) for heterogeneous integration, has been widely exploited for the fabrication of functional electronics system. To ensure a reliable process, strong adhesion for picking up and weak or no adhesion for printing are required. However, it is challenging to meet the requirements of switchable stamp adhesion. Here we introduce a simple, high fidelity process, namely tape transfer printing(TTP), enabled by chemically induced dramatic modulation in tape adhesive strength. We describe the working mechanism of the adhesion modulation that governs this process and demonstrate the method by high fidelity tape transfer printing several types of materials and devices, including Si pellets arrays, photodetector arrays, and electromyography (EMG) sensors, from their preparation substrates to various alien substrates. High fidelity tape transfer printing of components onto curvilinear surfaces is also illustrated

Reversed Janus Micro/Nanomotors with Internal Chemical Engine

Self-motile Janus colloids are important for enabling a wide variety of microtechnology applications as well as for improving our understanding of the mechanisms of motion of artificial micro- and nanoswimmers. We present here micro/nanomotors which possess a reversed Janus structure of an internal catalytic "chemical engine". The catalytic material (here platinum (Pt)) is embedded within the interior of the mesoporous silica (mSiO(2))-based hollow particles and triggers the decomposition of H2O2 when suspended in an aqueous peroxide (H2O2) solution. The pores/gaps at the noncatalytic (Pt) hemisphere allow the exchange of chemical species in solution between the exterior and the interior of the particle. By varying the diameter of the particles, we observed size-dependent motile behavior in the form of enhanced diffusion for 500 nm particles, and self-phoretic motion, toward the nonmetallic part, for 1.5 and 3 mu m ones. The direction of motion was rationalized, by a theoretical model based on self-phoresis. For the 3 mu m particles, a change in the morphology of the porous part is observed, which is accompanied by a change in the mechanism of propulsion via bubble nucleation and ejection as well as a change in the direction of motion.1128Ysciescopu

Dislocation density dependent electroabsorption in epitaxial lateral overgrown InGaN/GaN quantum structures

Cataloged from PDF version of article.We study electroabsorption (EA) behavior of InGaN/GaN quantum structures grown using epitaxial lateral overgrowth (ELOG) in correlation with their dislocation density levels and in comparison to steady state and time-resolved photoluminescence measurements. The results reveal that ELOG structures with decreasing mask stripe widths exhibit stronger EA performance, with a maximum EA enhancement factor of 4.8 compared to the reference without ELOG. The analyses show that the EA performance follows similar trends with decreasing dislocation density as the essential parameters of the photoluminescence spectra (peak position, width and intensity) together with the photoluminescence lifetimes. While keeping the growth window widths constant, compared to photoluminescence behavior, however, EA surprisingly exhibits the largest performance variation, making EA the most sensitive to the mask stripe widths. (C) 2013 Optical Society of Americ

Novel membrane bioreactor (MBR) coupled with a nonwoven fabric filter for household wastewater treatment

Conventional and modified membrane bioreactors (MBRs) are increasingly used in small-scale wastewater treatment. However, their widespread applications are hindered by their relatively high cost and operational complexity. In this study, we investigate a new concept of wastewater treatment using a nonwoven fabric filter bag (NFFB) as the membrane bioreactor. Activated sludge is charged in the nonwoven fabric filter bag and membrane filtration via the fabric is achieved under gravity flow without a suction pump. This study found that the biofilm layer formed inside the NFFB achieved 10 mg/L of suspended solids in the permeate within 20 min of initial operation. The dynamic biofilter layer showed good filterability and the specific membrane resistance consisted of 0.3-1.9 × 1012 m/kg. Due to the low F/M ratio (0.04-0.10 kg BOD5/m3/d) and the resultant low sludge yield, the reactor was operated without forming excess sludge. Although the reactor provided aerobic conditions, denitrification occurred in the biofilm layer to recover the alkalinity, thereby eliminating the need to supplement the alkalinity. This study indicates that the NFFB system provides a high potential of effective wastewater treatment with simple operation at reduced cost, and hence offer an attractive solution for widespread use in rural and sparsely populated areas. Crown Copyright © 2009

A Novel Dielectric Anomaly in Cuprates and Nickelates: Signature of an Electronic Glassy State

The low-frequency dielectric response of hole-doped insulators La_{2}Cu_{1-x}Li_{x}O_{4} and La_{2-x}Sr_{x}NiO_{4} shows a large dielectric constant \epsilon ^{'} at high temperature and a step-like drop by a factor of 100 at a material-dependent low temperature T_{f}. T_{f} increases with frequency and the dielectric response shows universal scaling in a Cole-Cole plot, suggesting that a charge glass state is realized both in the cuprates and in the nickelates.Comment: 5 pages, 4 figure

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface

Interface structure and strain relaxation in BaTiO3 thin films grown on GdScO3 and DyScO3 substrates with buried coherent SrRuO3 layer

To obtain the electrical properties of strained ferroelectric thin films, bottom electrodes with lattice constants and thermal coefficients matched to both films and substrates are needed. The interface structure, strain configuration, and strain relaxation in such bilayer systems are different from those in single layer systems. Here, we report transmission electron microscopy studies of epitaxial BaTiO3 films grown on GdScO3 and DyScO3 substrates with buried SrRuO3 layers. We found that the different strain relaxation behaviors observed in the bilayer are mainly dependent on lattice mismatch of each layer to the substrate and the thicknesses of each layer.open7