Surface segregation and the Al problem in GaAs quantum wells

Low-defect two-dimensional electron systems (2DESs) are essential for studies of fragile many-body interactions that only emerge in nearly-ideal systems. As a result, numerous efforts have been made to improve the quality of modulation-doped Al$_x$Ga$_{1-x}$As/GaAs quantum wells (QWs), with an emphasis on purifying the source material of the QW itself or achieving better vacuum in the deposition chamber. However, this approach overlooks another crucial component that comprises such QWs, the Al$_x$Ga$_{1-x}$As barrier. Here we show that having a clean Al source and hence a clean barrier is instrumental to obtain a high-quality GaAs 2DES in a QW. We observe that the mobility of the 2DES in GaAs QWs declines as the thickness or Al content of the Al$_x$Ga$_{1-x}$As barrier beneath the QW is increased, which we attribute to the surface segregation of Oxygen atoms that originate from the Al source. This conjecture is supported by the improved mobility in the GaAs QWs as the Al cell is cleaned out by baking

Giant Flexoelectric Effect in Ferroelectric Epitaxial Thin Films

We report on nanoscale strain gradients in ferroelectric HoMnO3 epitaxial thin films, resulting in a giant flexoelectric effect. Using grazing-incidence in-plane X-ray diffraction, we measured strain gradients in the films, which were 6 or 7 orders of magnitude larger than typical values reported for bulk oxides. The combination of transmission electron microscopy, electrical measurements, and electrostatic calculations showed that flexoelectricity provides a means of tuning the physical properties of ferroelectric epitaxial thin films, such as domain configurations and hysteresis curves.Comment: Accepted by Phys. Rev. Let

Putative spin liquid in the triangle-based iridate Ba3_3IrTi2_2O9_9

We report on thermodynamic, magnetization, and muon spin relaxation measurements of the strong spin-orbit coupled iridate Ba$_3$IrTi$_2$O$_9$, which constitutes a new frustration motif made up a mixture of edge- and corner-sharing triangles. In spite of strong antiferromagnetic exchange interaction of the order of 100~K, we find no hint for long-range magnetic order down to 23 mK. The magnetic specific heat data unveil the $T$-linear and -squared dependences at low temperatures below 1~K. At the respective temperatures, the zero-field muon spin relaxation features a persistent spin dynamics, indicative of unconventional low-energy excitations. A comparison to the $4d$ isostructural compound Ba$_3$RuTi$_2$O$_9$ suggests that a concerted interplay of compass-like magnetic interactions and frustrated geometry promotes a dynamically fluctuating state in a triangle-based iridate.Comment: Physical Review B accepte

Double polarization hysteresis loop induced by the domain pinning by defect dipoles in HoMnO3 epitaxial thin films

We report on antiferroelectriclike double polarization hysteresis loops in multiferroic HoMnO3 thin films below the ferroelectric Curie temperature. This intriguing phenomenon is attributed to the domain pinning by defect dipoles which were introduced unintentionally during film growth process. Electron paramagnetic resonance suggests the existence of Fe1+ defects in thin films and first principles calculations reveal that the defect dipoles would be composed of oxygen vacancy and Fe1+ defect. We discuss migration of charged point defects during film growth process and formation of defect dipoles along ferroelectric polarization direction, based on the site preference of point defects. Due to a high-temperature low-symmetry structure of HoMnO3, aging is not required to form the defect dipoles in contrast to other ferroelectrics (e.g., BaTiO3).Comment: 4 figure

Working principles of doping-well structures for high-mobility two-dimensional electron systems

Suppressing electron scattering is essential to achieve high-mobility two-dimensional electron systems (2DESs) that are clean enough to probe exotic interaction-driven phenomena. In heterostructures it is common practice to utilize modulation doping, where the ionized dopants are physically separated from the 2DES channel. The doping-well structure augments modulation doping by providing additional screening for all types of charged impurities in the vicinity of the 2DES, which is necessary to achieve record-breaking samples. Despite its prevalence in the design of ultra-high-mobility 2DESs, the working principles of the doping-well structure have not been reported. Here we elaborate on the mechanics of electron transfer from doping wells to the 2DES, focusing on GaAs/AlGaAs samples grown by molecular beam epitaxy. Based on this understanding we demonstrate how structural parameters in the doping well can be varied to tune the properties of the 2DES.Comment: 6 pages, 5 fiture

Dynamic Response of Wigner Crystals

The Wigner crystal, an ordered array of electrons, is one of the very first proposed many-body phases stabilized by the electron-electron interaction. This electron solid phase has been reported in ultra-clean two-dimensional electron systems at extremely low temperatures, where the Coulomb interaction dominants over the kinetic energy, disorder potential and thermal fluctuation. We closely examine this quantum phase with capacitance measurements where the device length-scale is comparable with the crystal's correlation length. The extraordinarily high performance of our technique makes it possible to quantitatively study the dynamic response of the Wigner crystal within the single crystal regime. Our result will greatly boost the study of this inscrutable electron solid