23 research outputs found

    P-Type Microcrystalline Silicon Films Prepared by VHF-PECVD Technique

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    Electromagnetic Design of \beta_g= 0.9, 650 MHz Superconducting Radiofrequency Cavity

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    We present the electromagnetic design study of a multi cell, \beta_g= 0.9, 650 MHz elliptic superconducting radiofrequency cavity, which can be used for accelerating H- particles in the linear accelerator part of a Spallation Neutron source. The design has been optimized for maximum achievable acceleration gradient by varying the geometry parameters of the cavity, for which a simple and general procedure is evolved that we describe in the paper. For the optimized geometry, we have studied the higher order modes supported by the cavity, and the threshold current for the excitation of the regenerative beam break up instability due to dipole modes has been estimated. Lorentz force detuning studies have also been performed for the optimized design and the calculations are presented to find the optimum location of the stiffener ring to compensate for the Lorentz force detuning.Comment: 43 pages, 25 figure

    Spectroscopic comprehension of Mott-Hubbard insulator to negative charge transfer metal transition in LaNi_{x}V_{1-x}O_{3} thin films

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    The room temperature (300 K) electronic structure of pulsed laser deposited LaNi_{x}V_{1-x}O_{3} thin films have been demonstrated. The substitution of early-transition metal (TM) V in LaVO_{3} thin films with late-TM Ni leads to the decreasing in out-of-plane lattice parameter. Doping of Ni does not alter the formal valence state of Ni and V in LaNi_{x}V_{1-x}O_{3} thin films, divulging the absence of carrier doping into the system. The valence band spectrum is observed to comprise of incoherent structure owing to the localized V 3d band along with the coherent structure at Fermi level. With increase in Ni concentration, the weight of the coherent feature increases, which divulges its origin to the Ni 3d-O 2p hybridized band. The shift of Ni 3d-O 2p hybridized band towards higher energy in Ni doped LaVO_{3} films compared to the LaNiO_{3} film endorses the modification in ligand to metal charge transfer (CT) energy. The Ni doping in Mott-Hubbard insulator LaVO_{3} leads to the closure of Mott-Hubbard gap by building of spectral weight that provides the delocalized electrons for conduction. A transition from bandwidth control Mott-Hubbard insulator LaVO_{3} to negative CT metallicity character in LaNiO_{3} film is observed. The study reveals that unlike in Mott-Hubbard insulators where the strong Coulomb interaction between the 3d electrons decides the electronic structure of the system, CT energy can deliver an additional degree of freedom to optimize material properties in Ni doped LaVO_{3} films.Comment: 30 pages, 8 figure

    Perception Versus Actual Value of Quality of Drinking Water: A Case Study of Iron and Steel Industry in West Bengal, India

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    The study aims to understand employees’ knowledge, awareness, and overall perception of drinking water quality in the Iron and Steel Industry in Burnpur, India. Further, this study evaluated drinking water’s physicochemical and bacteriological properties collected from different company sites. This study uses a mixed-method approach with individual interviews of selected employees (n=342) and the laboratory test of eight selected drinking water sites. The results show that most employees considered drinking water acceptable to be excellent. However, only 30% of employees in Site 1 (Coke Oven By-Product department) have reported organoleptic properties of water under the excellent category. The result explained that other physicochemical and bacteriological properties are in good status in all sites except for a colony count, expressing their suitability for drinking purposes. In summary, employees’ perception of water quality aligns with their drinking water’s physicochemical and bacteriological properties

    Estimated effects of maternal obstetric and socioeconomic factors on low birth weight in India, (2019–21).

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    Estimated effects of maternal obstetric and socioeconomic factors on low birth weight in India, (2019–21).</p

    Distribution of preterm birth and low birth weight by background characteristics.

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    Distribution of preterm birth and low birth weight by background characteristics.</p
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