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4 research outputs found

Design considerations for 400 GHz InP/InGaAs Heterojunction Bipolar Transistors

Author: Li James Chingwei
Publication venue: eScholarship, University of California
Publication date: 01/01/2006
Field of study

eScholarship - University of California

Modeling poly-silicon gate depletion in submicron metal oxide semiconductor devices

Author: Li James Chingwei, 1975-
Publication venue: Massachusetts Institute of Technology
Publication date: 01/01/1999
Field of study

Thesis (M.Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1999.Includes bibliographical references (p. 119-121).by James Chingwei Li.M.Eng

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Design considerations for 400 GHz InP/InGaAs Heterojunction Bipolar Transistors

Author: Li James Chingwei
Publication venue: eScholarship, University of California
Publication date: 01/01/2006
Field of study

eScholarship - University of California

Investigation Into the Scalability of Selectively Implanted Buried Subcollector (SIBS) for Submicrometer InP DHBTs

Author: Binqiang Shi
Charles H. Fields
David H. Chow
Donald A. Hitko
James Chingwei Li
Marko Sokolich
Mary Y. Chen
Peter M. Asbeck
Rajesh D. Rajavel
Steven S. Bui
Tahir Hussain
Yakov Royter
Publication venue: 'Institute of Electrical and Electronics Engineers (IEEE)'
Publication date
Field of study

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