Silicon nanophotonic wire structures fabricated by 193nm optical lithography

We demonstrate the use of 193nm optical lithography for fabricating nanophotonic wire structures on sificon-on-insulator (SOI) technology. We present fabrication and measurement result on wire devices. We report a propagation loss of 2.8dB/cm for 450X220nm photonic wire

Fabrication of photonic wire and crystal circuits in silicon-on-insulator using 193-nm optical lithography

High-index contrast silicon-on-insulator technology enables wavelength-scale compact photonic circuits. We report fabrication of photonic circuits in silicon-on-insulator using complementary metal-oxide-semiconductor processing technology. By switching from advanced optical lithography at 248 to 193 nm, combined with improved dry etching, a substantial improvement in process window, linearity, and proximity effect is achieved. With the developed fabrication process, propagation and bending loss of photonic wires were characterized. Measurements indicate a propagation loss of 2.7 dB/cm for 500-nm photonic wire and an excess bending loss of 0.013 dB/90 bend of 5-m radius. Through this paper, we demonstrate the suitability of high resolution optical lithography and dry etch processes for mass production of photonic integrated circuits

High and hyper NA immersion lithography using advanced patterning film APF (TM)

The objective of this work is to enable the manufacturing of features with most aggressive pitches available to date using APF as a strippable hard mask (HM). Essential for the capability of printing small and in particular dense features is the control of optical reflections during exposure. This is achieved through control of the optical parameters of the used films. The considered optical parameters are the complex reflection coefficient ((n) over tilde =n-ik) and thickness. The angle of incidence of the exposing light when using high or hyper NA (numerical aperture) lithography is no longer negligible. As a consequence the optimum film thickness corresponding to the lowest reflection varies with the pitch of the features being imaged In this paper we discuss the results based on a Hyper-NA simulation illustrating the complexity of such at? optimization process. Furthermore we discuss various High-NA simulations and corresponding physical experimental work confirming the validity of this approach