1 research outputs found
Observation of Anisotropic Growth and Compositional Discontinuity in AlGaN Electron-Blocking Layers on GaN Microrods
In GaN microrods,
phase separation of the AlGaN electron-blocking
layer is an enormous obstacle for achieving high-efficiency light-emitting
diodes, as this phenomenon negatively affects the device efficiency
by inducing unwanted band-energy modulations. Here, we found that
the AlGaN electron-blocking layer on each <i>m</i>-plane
of the GaN microrod appears to be phase separated, and each electron-blocking
layer has a different thickness and length. Our careful analysis based
on atom probe tomography reveals that the Al distribution in AlGaN
is not uniform and that Al-rich and Al-deficient regions are clearly
present. In addition, the longer surface diffusion length of Ga adatoms,
as compared to Al adatoms, and the different initial strain state
of each <i>m</i>-plane in the GaN rods are deeply associated
with the different growth rates and inhomogeneous Al composition of
AlGaN, resulting in phase separation of the AlGaN electron-blocking
layer. These atomic-scale observations in the structural and chemical
composition of AlGaN grown on GaN microrods could provide expanded
opportunities for building a wide range of high-quality AlGaN electron-blocking
layers