Characterisation of High Current Density Resonant Tunneling Diodes for THz Emission Using Photoluminescence Spectroscopy

We discuss the numerical simulation of high current density InGaAs/AlAs/InP resonant tunneling diodes with a view to their optimization for application as THz emitters. We introduce a figure of merit based upon the ratio of maximum extractable THz power and the electrical power developed in the chip. The aim being to develop high efficiency emitters as output power is presently limited by catastrophic failure. A description of the interplay of key parameters follows, with constraints on strained layer epitaxy introduced. We propose an optimized structure utilizing thin barriers paired with a comparatively wide quantum well that satisfies strained layer epitaxy constraints

Non-destructive characterization of thin layer resonant tunnelling diodes

We present an advanced nondestructive characterization scheme for high current density AlAs/InGaAs resonant tunneling diodes pseudomorphically grown on InP substrates. We show how low-temperature photoluminescence spectroscopy (LT-PL) and high-resolution X-ray diffractometry (HR-XRD) are complementary techniques to increase the confidence of the characterized structure. The lattice-matched InGaAs is characterized and found to be of high quality. We discuss the inclusion of an undoped “copy” well (C-well) in terms of enhancements to HR-XRD and LT-PL characterization and quantify the improved precision in determining the structure. As a consequence of this enhanced precision in the determination of physical structure, the AlAs barriers and quantum well (QW) system are found to contain nonideal material interfaces. Their roughness is characterized in terms of the full width to half-maximum of the split LT-PL emission peaks, revealing a ±1 atomic sheet variance to the QW width. We show how barrier asymmetry can be detected through fitting of both optical spectra and HR-XRD rocking curves

Fabrication, Characterisation, and Epitaxial Optimisation of MOVPE-Grown Resonant Tunnelling Diode THz Emitters

Resonant tunnelling diodes (RTDs) are a strong candidate for future wireless communications in the THz region, offering compact, room-temperature operation with Gb/s transfer rates. We employ the InGaAs/AlAs/InP material system, offering advantages due to high electron mobility, suitable band-offsets, and low resistance contacts. We describe an RTD emitter operating at 353GHz, radiating in this atmospheric transmittance window through a slot antenna. The fabrication scheme uses a dual-pass technique to achieve reproducible, very low resistivity, ohmic contacts, followed by accurate control of the etched device area. The top contact connects the device via the means of an air bridge. We then proceed to model ways to increase the resonator efficiency, in turn improving the radiative efficiency, by changing the epitaxial design. The optimization takes into account the accumulated stress limitations and realities of reactor growth. Due to the absence of useful in-situ monitoring in commercially-scalable metal-organic vapour phase epitaxy (MOVPE), we have developed a robust non-destructive epitaxial characterisation scheme to verify the quality of these mechanically shallow and atomically thin devices. A dummy copy of the active region element is grown to assist with low temperature photoluminescence spectroscopy (LTPL) characterisation. The resulting linewidths limits the number of possible solutions of quantum well (QW) width and depth pairs. In addition, the doping levels can be estimated with a sufficient degree of accuracy by measuring the Moss-Burstein shift of the bulk material. This analysis can then be combined with high resolution X-ray diffractometry (HRXRD) to increase its accuracy

Resonant Tunnelling Diodes for Next Generation THz Systems

Resonant tunnelling diodes (RTDs) are a strong candidate for future wireless communications in the THz spectrum (sub-millimetre waves), offering compact, roomtemperature operation with the potential to exceed the bit transfer rate mandated by the 12G-SDI standard, using a single wireless link. A free-space RTD emitter operating at 353GHz is described. The fabrication process consists of a dual-pass I-line photolithography & etch technique using an air bridge, allowing low resistivity ohmic contacts, and accurate control of desired device area. With extrinsic circuit elements taken into account, the intrinsic semiconductor efficiency is analysed to investigate structural improvements for radiative efficiency. Such optimised structures are presented, and then characterised after being epitaxially grown with commercially viable metal-organic vapour phase epitaxy (MOVPE) reactors. A combination of low temperature photoluminescence spectroscopy, X-Ray diffractometry, and transmission electron microscopy attest the quality of the new material. We end with a suggestion for the next steps to exceed technological readiness levels of 8, and use monolithic RTD emitters as components in new systems

Effects of hospital facilities on patient outcomes after cancer surgery: an international, prospective, observational study

© 2022 The Author(s). Published by Elsevier Ltd. This is an Open Access article under the CC BY 4.0 licenseBackground: Early death after cancer surgery is higher in low-income and middle-income countries (LMICs) compared with in high-income countries, yet the impact of facility characteristics on early postoperative outcomes is unknown. The aim of this study was to examine the association between hospital infrastructure, resource availability, and processes on early outcomes after cancer surgery worldwide. Methods: A multimethods analysis was performed as part of the GlobalSurg 3 study—a multicentre, international, prospective cohort study of patients who had surgery for breast, colorectal, or gastric cancer. The primary outcomes were 30-day mortality and 30-day major complication rates. Potentially beneficial hospital facilities were identified by variable selection to select those associated with 30-day mortality. Adjusted outcomes were determined using generalised estimating equations to account for patient characteristics and country-income group, with population stratification by hospital. Findings: Between April 1, 2018, and April 23, 2019, facility-level data were collected for 9685 patients across 238 hospitals in 66 countries (91 hospitals in 20 high-income countries; 57 hospitals in 19 upper-middle-income countries; and 90 hospitals in 27 low-income to lower-middle-income countries). The availability of five hospital facilities was inversely associated with mortality: ultrasound, CT scanner, critical care unit, opioid analgesia, and oncologist. After adjustment for case-mix and country income group, hospitals with three or fewer of these facilities (62 hospitals, 1294 patients) had higher mortality compared with those with four or five (adjusted odds ratio [OR] 3·85 [95% CI 2·58–5·75]; p<0·0001), with excess mortality predominantly explained by a limited capacity to rescue following the development of major complications (63·0% vs 82·7%; OR 0·35 [0·23–0·53]; p<0·0001). Across LMICs, improvements in hospital facilities would prevent one to three deaths for every 100 patients undergoing surgery for cancer. Interpretation: Hospitals with higher levels of infrastructure and resources have better outcomes after cancer surgery, independent of country income. Without urgent strengthening of hospital infrastructure and resources, the reductions in cancer-associated mortality associated with improved access will not be realised. Funding: National Institute for Health and Care Research