0.25 µm Fully-Depleted SOI MOSFET's for RF mixed analog-digital circuits, including a comparison with Partially-Depleted devices for High Frequency noise parameters

The purpose of this paper is to completely describe the low and high frequency performance including microwave noise parameters of 0.25 μm fully depleted (FD) silicon-on-insulator (SOI) devices and to compare the noise performance with 0.25 μm partially depleted (PD) devices. These FD devices present a state of the art NFmin of 0.8 dB and high Gass of 13 dB at 6 GHz, at View the MathML source, View the MathML source at 80 μm total gate width. A extrapolated maximum oscillation frequency of about 70 GHz has been obtained at View the MathML source and Jds=100 mA/mm