COMPUTER-GENERATED HOLOGRAM ETCHED IN GAAS FOR OPTICAL INTERCONNECTION OF VLSI CIRCUITS

By integrating, on a wafer plane, GaAs semiconductor optoelectronic modulators and detectors with computer-generated holograms between then, the potential for in-plane interconnections is proposed. We report the fabrication and characterisation of a binary-phase relief hologram etched in a GaAs wafer using an averaged Fresnel zone plate design to focus light to 2 x 2 spots for array interconnection. Efficiencies of 28% for this design of binary CGH etched in GaAs have been achieved, close to the theoretical maximum

Generalized matrix-based Bayesian network for multi-state systems

To achieve a resilient society, the reliability of core engineering systems should be evaluated accurately. However, this remains challenging due to the complexity and large scale of real-world systems. Such complexity can be efficiently modelled by Bayesian network (BN), which formulates the probability distribution through a graph-based representation. On the other hand, the scale issue can be addressed by the matrix-based Bayesian network (MBN), which allows for efficient quantification and flexible inference of discrete BN. However, the MBN applications have been limited to binary-state systems, despite the essential role of multi-state engineering systems. Therefore, this paper generalizes the MBN to multi-state systems by introducing the concept of composite state. The definitions and inference operations developed for MBN are modified to accommodate the composite state, while formulations for the parameter sensitivity are also developed for the MBN. To facilitate applications of the generalized MBN, three commonly used techniques for decomposing an event space are employed to quantify the MBN, i.e. utilizing event definition, branch and bound (BnB), and decision diagram (DD), each being accompanied by an example system. The numerical examples demonstrate the efficiency and applicability of the generalized MBN

Asymmetry of localised states in a single quantum ring: polarization dependence of excitons and biexcitons

We performed spectroscopic studies of a single GaAs quantum ring with an anisotropy in the rim height. The presence of an asymmetric localised state was suggested by the adiabatic potential. The asymmetry was investigated in terms of the polarization dependence of excitons and biexcitons, where a large energy di erence (0.8 meV) in the exciton emission energy for perpendicular polarizations was observed and the oscillator strengths were also compared using the photoluminescence decay rate. For perpendicular polarizations the biexciton exhibits twice the energy di erence seen for the exciton, a fact that may be attributed to a possible change in the selection rules for the lowered symmetry.Comment: accepted in Applied physics Letter

Excited exciton and biexciton localised states in a single quantum ring

We observe excited exciton and biexciton states of localised excitons in an anisotropic quantum ring, where large polarisation asymmetry supports the presence of a crescent-like localised structure. We also find that saturation of the localised ground state exciton with increasing excitation can be attributed to relatively fast dissociation of biexcitons (? 430 ps) compared to slow relaxation from the excited state to the ground state (? 1000 ps). As no significant excitonic Aharonov-Bohm oscillations occur up to 14 T, we conclude that phase coherence around the rim is inhibited as a consequence of height anisotropy in the quantum ring.Comment: 4 pages, 4 figure