Low-Cost and Biodegradable Thermoelectric Devices Based on van der Waals Semiconductors on Paper Substrates

We present a method to fabricate handcrafted thermoelectric devices on standard office paper substrates. The devices are based on thin films of WS2, Te, and BP (P-type semiconductors) and TiS3 and TiS2 (N-type semiconductors), deposited by simply rubbing powder of these materials against paper. The thermoelectric properties of these semiconducting films revealed maximum Seebeck coefficients of (+1.32 ± 0.27) mV K−1 and (−0.82 ± 0.15) mV K−1 for WS2 and TiS3, respectively. Additionally, Peltier elements were fabricated by interconnecting the P- and N-type films with graphite electrodes. A thermopower value up to 6.11 mV K−1 was obtained when the Peltier element were constructed with three junctions. The findings of this work show proof-of-concept devices to illustrate the potential application of semiconducting van der Waals materials in future thermoelectric power generation as well as temperature sensing for low-cost disposable electronic devices. © 2022 The Authors. Energy & Environmental Materials published by John Wiley & Sons Australia, Ltd on behalf of Zhengzhou University.This work was funded by the European Research Council (ERC) under the Euro-pean Union’s Horizon 2020 research and innovation program (grant agreementno. 755655, ERC-StG 2017 project 2D-TOPSENSE), the Ministry of Science andInnovation (Spain) through the project PID2020-115566RB-I00. A.M.A. and A.N.extend their sincere appreciation to the Distinguished Scientist Fellowship Pro-gram (DSFP) at King Saud University for partial funding of this work. J.Q. acknowl-edgefinancial support from the Agencia Estatal de Investigaci ́on of Spain (GrantsPID2019-106820RB, RTI2018-097180-B-100, and PGC2018-097018-B-I00) and theJunta de Castilla y Le ́on (Grants SA256P18 and SA121P20), including funding byERDF/FEDER. J.Q. acknowledgesfinancial support from Universidad Complutensede Madrid and European Commission (MSCA COFUND UNA4CAREER grant. Project number 4129252). J.Q. acknowledgesfinancialsupport from MICINN (Spain) through the programJuan de la Cierva-Incorporaci ́on. J.A.A. thanks thefinan-cial support of the Spanish Ministry of Industry andCompetitiveness to the project MAT2017-84496-R.J.R.A and I.J.F acknowledgefinancial support from theMinistry of Science and Innovation (Spain) through theproject RT2018-099794-B-100, D.V. acknowledgesfinan-cial support from the Ministry de Universities (Spain)(Ph.D. contract FPU19/04224).Supporting Information is available from the WileyOnline Library or from the authorPeer reviewe

Quantum transport in superconducting hybrids: Molecular devices and layered materials

In this thesis we investigate superconducting hybrids made from two material systems, namely, molecules and layered materials. For studies of superconducting phenomena in molecular junctions we develop two platforms which rely on the superconducting proximity effect to preserve pre-existing nano-gap formation techniques and bonding chemistries. In the second half of this thesis we investigate the thickness dependent properties of the 2H crystal phase of two layered materials; molybdenum disulfide (2H-MoS2) and tantalum disulfide (2H-TaS2).QN/van der Zant La

Investigating Laser-Induced Phase Engineering in MoS₂ Transistors

Phase engineering of MoS₂ transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS₂ flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS₂ transistors by simple light exposure. Nevertheless, the fabrication and demonstration of laser-patterned MoS₂ devices starting from the metallic polymorph have not been demonstrated yet. Here, we study the effects of laser radiation on 1T/1T′-MoS₂ transistors with the prospect of driving an in situ phase transition to the 2H-polymorph through light exposure. We find that although the Raman peaks of 2H-MoS₂ become more prominent and the ones from the 1T/1T′ phase fade after the laser exposure, the semiconducting properties of the laser-patterned devices are not fully restored, and the laser treatment ultimately leads to the degradation of the transport channel.Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.QN/Steele LabQN/van der Zant La