14 research outputs found
The Ab-Initio Simulation of the Liquid Ga-Se System
Ab-initio dynamical simulation is used to study the liquid Ga-Se system at
the three concentrations GaSe, GaSe and GaSe at the temperature
1300~K. The simulations are based on the density functional pseudopotential
technique, with the system maintained on the Born-Oppenheimer surface by
conjugate gradients minimization. We present results for the partial structure
factors and radial distribution functions, which reveal how the liquid
structure depends on the composition. Our calculations of the electrical
conductivity using the Kubo-Greenwood approximation show that
depends very strongly on the composition. We show how this variation of
is related to the calculated electronic density of states. Comparisons
with recent experimental determinations of the structure and conductivity are
also presented.Comment: REVTEX, 8 pages, 4 uuencoded poscript figures,
([email protected]
Ab-initio simulation of high-temperature liquid selenium
Ab initio molecular dynamics simulation is used to investigate the structure
and dynamics of liquid Se at temperatures of 870 and 1370~K. The calculated
static structure factor is in excellent agreement with experimental data. The
calculated radial distribution function gives a mean coordination number close
to 2, but we find a significant fraction of one-fold and three-fold atoms,
particularly at 1370~K, so that the chain structure is considerably disrupted.
The self-diffusion coefficient has values (~m~s)
typical of liquid metals.Comment: 10 pages, 4 Poscript figures, uses REVTE
Reverse Monte Carlo modeling of amorphous silicon
An implementation of the Reverse Monte Carlo algorithm is presented for the
study of amorphous tetrahedral semiconductors. By taking into account a number
of constraints that describe the tetrahedral bonding geometry along with the
radial distribution function, we construct a model of amorphous silicon using
the reverse monte carlo technique. Starting from a completely random
configuration, we generate a model of amorphous silicon containing 500 atoms
closely reproducing the experimental static structure factor and bond angle
distribution and in improved agreement with electronic properties. Comparison
is made to existing Reverse Monte Carlo models, and the importance of suitable
constraints beside experimental data is stressed.Comment: 6 pages, 4 PostScript figure
Towards device-size atomistic models of amorphous silicon
The atomic structure of amorphous materials is believed to be well described
by the continuous random network model. We present an algorithm for the
generation of large, high-quality continuous random networks. The algorithm is
a variation of the "sillium" approach introduced by Wooten, Winer, and Weaire.
By employing local relaxation techniques, local atomic rearrangements can be
tried that scale almost independently of system size. This scaling property of
the algorithm paves the way for the generation of realistic device-size atomic
networks.Comment: 7 pages, 3 figure
Ab Initio Molecular Dynamics Simulation of Liquid Ga_xAs_{1-x} Alloys
We report the results of ab initio molecular dynamics simulations of liquid
Ga_xAs_{1-x} alloys at five different concentrations, at a temperature of 1600
K, just above the melting point of GaAs. The liquid is predicted to be metallic
at all concentrations between x = 0.2 and x = 0.8, with a weak resistivity
maximum near x = 0.5, consistent with the Faber-Ziman expression. The
electronic density of states is finite at the Fermi energy for all
concentrations; there is, however, a significant pseudogap especially in the
As-rich samples. The Ga-rich density of states more closely resembles that of a
free-electron metal. The partial structure factors show only a weak indication
of chemical short-range order. There is also some residue of the covalent
bonding found in the solid, which shows up in the bond-angle distribution
functions of the liquid state. Finally, the atomic diffusion coefficients at
1600K are calculated to be 2.1 \times 10^{-4} cm^2/sec for Ga ions in
Ga_{0.8}As_{0.2} and 1.7 \times 10^{-4} cm^2/sec for As ions in
Ga_{0.2}As_{0.8}.Comment: 29 pages, 10 eps figures, accepted for publication in Phys. Rev.
Systematic Study of Electron Localization in an Amorphous Semiconductor
We investigate the electronic structure of gap and band tail states in
amorphous silicon. Starting with two 216-atom models of amorphous silicon with
defect concentration close to the experiments, we systematically study the
dependence of electron localization on basis set, density functional and spin
polarization using the first principles density functional code Siesta. We
briefly compare three different schemes for characterizing localization:
information entropy, inverse participation ratio and spatial variance. Our
results show that to accurately describe defect structures within self
consistent density functional theory, a rich basis set is necessary. Our study
revealed that the localization of the wave function associated with the defect
states decreases with larger basis sets and there is some enhancement of
localization from GGA relative to LDA. Spin localization results obtained via
LSDA calculations, are in reasonable agreement with experiment and with
previous LSDA calculations on a-Si:H models.Comment: 16 pages, 11 Postscript figures, To appear in Phys. Rev.