Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior

We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones

On absolute moments of characteristic polynomials of a certain class of complex random matrices

Integer moments of the spectral determinant $|\det(zI-W)|^2$ of complex random matrices $W$ are obtained in terms of the characteristic polynomial of the Hermitian matrix $WW^*$ for the class of matrices $W=AU$ where $A$ is a given matrix and $U$ is random unitary. This work is motivated by studies of complex eigenvalues of random matrices and potential applications of the obtained results in this context are discussed.Comment: 41 page, typos correcte

A CRITICAL COMPARISON OF VARIOUS PROCESSING METHODS FOR YBA2CU3O7-X SUPERCONDUCTOR

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Inhibition of Notch1 induces population and suppressive activity of regulatory T cell in inflammatory arthritis

10.7150/thno.26093Theranostics8174795-480