Effect of dimerization on the field-induced birefringence in ferrofluids

The magnetic-field-induced birefringence in a ferrofluid composed of spherical cobalt nanoparticles has been studied both experimentally and theoretically. The considerable induced birefringence determined experimentally has been attributed to the formation of chains of nanoparticles. The birefringence has been measured as a function of the external magnetic field and the volume fraction (f) of nanoparticles. It is quadratic in f as opposed to the Faraday effect, which is linear in f. Experimental results agree well with the theoretical model based on a simple density functional approach. For dilute solutions the experimental results can be explained by assuming that only dimers of nanoparticles are formed while the concentration of longer chains is negligible

Optical properties of metallic (III,Mn)V ferromagnetic semiconductors in the infrared to visible range

We report on a study of the ac conductivity and magneto-optical properties of metallic ferromagnetic (III,Mn)V semiconductors in the infrared to visible spectrum. Our analysis is based on the successful kinetic exchange model for (III,Mn)V ferromagnetic semiconductors. We perform the calculations within the Kubo formalism and treat the disorder effects pertubatively within the Born approximation, valid for the metallic regime. We consider an eight-band Kohn-Luttinger model (six valence bands plus two conduction bands) as well as a ten-band model with additional dispersionless bands simulating phenomenologically the upper-mid-gap states induced by antisite and interstitial impurities. These models qualitatively account for optical-absorption experiments and predict new features in the mid-infrared Kerr angle and magnetic-circular-dichroism properties as a function of Mn concentration and free carrier density.Comment: 10 pages, 7 figures, some typos correcte

Direct measure of the exciton formation in quantum wells from time resolved interband luminescence

We present the results of a detailed time resolved luminescence study carried out on a very high quality InGaAs quantum well sample where the contributions at the energy of the exciton and at the band edge can be clearly separated. We perform this experiment with a spectral resolution and a sensitivity of the set-up allowing to keep the observation of these two separate contributions over a broad range of times and densities. This allows us to directly evidence the exciton formation time, which depends on the density as expected from theory. We also evidence the dominant contribution of a minority of excitons to the luminescence signal, and the absence of thermodynamical equilibrium at low densities

2s exciton-polariton revealed in an external magnetic field

We demonstrate the existence of the excited state of an exciton-polariton in a semiconductor microcavity. The strong coupling of the quantum well heavy-hole exciton in an excited 2s state to the cavity photon is observed in non-zero magnetic field due to surprisingly fast increase of Rabi energy of the 2s exciton-polariton in magnetic field. This effect is explained by a strong modification of the wave-function of the relative electron-hole motion for the 2s exciton state.Comment: 5 pages, 5 figure

Charge and spin distributions in GaMnAs/GaAs Ferromagnetic Multilayers

A self-consistent electronic structure calculation based on the Luttinger-Kohn model is performed on GaMnAs/GaAs multilayers. The Diluted Magnetic Semiconductor layers are assumed to be metallic and ferromagnetic. The high Mn concentration (considered as 5% in our calculation) makes it possible to assume the density of magnetic moments as a continuous distribution, when treating the magnetic interaction between holes and the localized moment on the Mn(++) sites. Our calculation shows the distribution of heavy holes and light holes in the structure. A strong spin-polarization is observed, and the charge is concentrated mostly on the GaMnAs layers, due to heavy and light holes with their total angular momentum aligned anti-parallel to the average magnetization. The charge and spin distributions are analyzed in terms of their dependence on the number of multilayers, the widths of the GaMnAs and GaAs layers, and the width of lateral GaAs layers at the borders of the structure.Comment: 12 pages,7 figure