Critical spin-flip scattering at the helimagnetic transition of MnSi

We report spherical neutron polarimetry (SNP) and discuss the spin-flip scattering cross sections as well as the chiral fraction $\eta$ close to the helimagnetic transition in MnSi. For our study, we have developed a miniaturised SNP device that allows fast data collection when used in small angle scattering geometry with an area detector. Critical spin-flip scattering is found to be governed by chiral paramagnons that soften on a sphere in momentum space. Carefully accounting for the incoherent spin-flip background, we find that the resulting chiral fraction $\eta$ decreases gradually above the helimagnetic transition reflecting a strongly renormalised chiral correlation length with a temperature dependence in excellent quantitative agreement with the Brazovskii theory for a fluctuation-induced first order transition.Comment: 5 pages, 3 figure

Analytische Modellierung des Zeitverhaltens und der Verlustleistung von CMOS-Gattern

In modernen CMOS-Technologien werden die Verzögerungszeit, die Ausgangsflankensteilheit und der Querstrom eines Gatters sowohl durch die Lastkapazität als auch durch die Steilheit des Eingangssignals beeinflusst. Die heute verwendeten Technologiebibliotheken beinhalten Tabellenmodelle mit 25 oder mehr Stützpunkten dieser Abhängigkeiten, woraus durch Interpolation die benötigten Zwischenwerte berechnet werden. Bisherige Versuche, analytische Modelle abzuleiten beruhten darauf, den Querstrom zu vernachlässigen oder Transistorströme als stückweise linear anzunähern. Der hier gezeigte Ansatz beruht auf einer näherungsweisen Lösung der Differentialgleichung, die aus den beiden Transistorströmen und einer Lastkapazität besteht und damit das Schaltverhalten eines Inverters beschreibt. Mit wenigen Technologieparametern können daraus für einen beliebig dimensionierten Inverter die für eine Timing- und Verlustleistungsanalyse notwendigen Größen berechnet werden. Das Modell erreicht bei einem Vergleich zu Referenzwerten aus SPICE Simulationen eine Genauigkeit von typischerweise 5%.</p><p style=&quot;line-height: 20px;&quot;>In modern CMOS-technologies the gate delay, output transition time and the short-circuit current depend on the capacitive load as well as on the input transition time. Today’s technology libraries use table models with 25 or more samples for these dependencies. Intermediate values have to be calculated through interpolation. Attempts to derive analytical models are based on neglecting the short-circuit current or approximating it by piecewise linear functions. The approach shown in this paper provides an approximate solution for the differential equation describing the dynamic behavor of an inverter circuit. It includes the influence of both transistor currents and a single load capacitance. The required values for timing and power analysis can be calculated with a small set of technology parameters for an arbitrary designed inverter. Compared to reference values extracted from SPICE simulations, the model achieves a typical precision of 5%

Hardwarearchitektur für einen universellen LDPC Decoder

Im vorliegenden Beitrag wird eine universelle Decoderarchitektur für einen Low-Density Parity-Check (LDPC) Code Decoder vorgestellt. Anders als bei den in der Literatur häufig beschriebenen Architekturen für strukturierte Codes ist die hier vorgestellte Architektur frei programmierbar, so dass jeder beliebige LDPC Code durch eine Änderung der Initialisierung des Speichers für die Prüfmatrix mit derselben Hardware decodiert werden kann. Die größte Herausforderung beim Entwurf von teilparallelen LDPC Decoder Architekturen liegt im konfliktfreien Datenaustausch zwischen mehreren parallelen Speichern und Berechnungseinheiten, wozu ein Mapping und Scheduling Algorithmus benötigt wird. Der hier vorgestellte Algorithmus stützt sich auf Graphentheorie und findet für jeden beliebigen LDPC Code eine für die Architektur optimale Lösung. Damit sind keine Wartezyklen notwendig und die Parallelität der Architektur wird zu jedem Zeitpunkt voll ausgenutzt

A Phenomenological Description of the Non-Fermi-Liquid Phase of MnSi

In order to understand the non-Fermi-liquid behavior of MnSi under pressure we propose a scenario on the basis of the multispiral state of the magnetic moment. This state can describe the recent critical experiment of the Bragg sphere in the neutron scattering which is the key ingredient of the non-Fermi-liquid behavior.Comment: 3 page

Peculiar behavior of the electrical resistivity of MnSi at the ferromagnetic phase transition

The electrical resistivity of a single crystal of MnSi was measured across its ferromagnetic phase transition line at ambient and high pressures. Sharp peaks of the temperature coefficient of resistivity characterize the transition line. Analysis of these data shows that at pressures to ~0.35 GPa these peaks have fine structure, revealing a shoulder at ~ 0.5 K above the peak. It is symptomatic that this structure disappears at pressures higher than ~0.35 GPa, which was identified earlier as a tricritical poin

Parasitic small-moment-antiferromagnetism and non-linear coupling of hidden order and antiferromagnetism in URu2Si2 observed by Larmor diffraction

We report simultaneous measurements of the distribution of lattice constants and the antiferromagnetic moment in high-purity URu2Si2, using both Larmor and conventional neutron diffraction, as a function of temperature and pressure up to 18 kbar. We establish that the tiny moment in the hidden order (HO) state is purely parasitic and quantitatively originates from the distribution of lattice constants. Moreover, the HO and large-moment antiferromagnetism (LMAF) at high pressure are separated by a line of first-order phase transitions, which ends in a bicritical point. Thus the HO and LMAF are coupled non-linearly and must have different symmetry, as expected of the HO being, e.g., incommensurate orbital currents, helicity order, or multipolar order.Comment: 4 pages, 4 figure

Linearly polarized GHz magnetization dynamics of spin helix modes in the ferrimagnetic insulator Cu2_{2}OSeO3_{3}

Linear dichroism -- the polarization dependent absorption of electromagnetic waves -- is routinely exploited in applications as diverse as structure determination of DNA or polarization filters in optical technologies. Here filamentary absorbers with a large length-to-width ratio are a prerequisite. For magnetization dynamics in the few GHz frequency regime strictly linear dichroism was not observed for more than eight decades. Here, we show that the bulk chiral magnet Cu$_{2}$OSeO$_{3}$ exhibits linearly polarized magnetization dynamics at an unexpectedly small frequency of about 2 GHz. Unlike optical filters that are assembled from filamentary absorbers, the magnet provides linear polarization as a bulk material for an extremely wide range of length-to-width ratios. In addition, the polarization plane of a given mode can be switched by 90$^\circ$ via a tiny variation in width. Our findings shed a new light on magnetization dynamics in that ferrimagnetic ordering combined with anisotropic exchange interaction offers strictly linear polarization and cross-polarized modes for a broad spectrum of sample shapes. The discovery allows for novel design rules and optimization of microwave-to-magnon transduction in emerging microwave technologies.Comment: 20 pages, 4 figure

The quantum phase transition of itinerant helimagnets

We investigate the quantum phase transition of itinerant electrons from a paramagnet to a state which displays long-period helical structures due to a Dzyaloshinskii instability of the ferromagnetic state. In particular, we study how the self-generated effective long-range interaction recently identified in itinerant quantum ferromagnets is cut-off by the helical ordering. We find that for a sufficiently strong Dzyaloshinskii instability the helimagnetic quantum phase transition is of second order with mean-field exponents. In contrast, for a weak Dzyaloshinskii instability the transition is analogous to that in itinerant quantum ferromagnets, i.e. it is of first order, as has been observed in MnSi.Comment: 5 pages RevTe