Different patterns of labour market integration by migration motivation in Europe: the role of host country human capital

We study whether individual decisions to invest in the host country, namely obtaining equivalent qualifications, improving language skills, or naturalisation explain differences in labour market integration between migrants depending on their initial motivation. We use cross-national European data from the 2008 ad-hoc module of the Labour Force Survey to analyse migrant gaps in labour market participation, employment, occupational status and precarious employment. We find that different rates of and returns to host country human capital explain a substantial part of the improvements in labour market outcomes with years of residence, particularly for non-economic migrants who experience faster growth on average

Theory of Raman Scattering by Phonons in Germanium Nanostructures

Within the linear response theory, a local bond-polarization model based on the displacement–displacement Green’s function and the Born potential including central and non-central interatomic forces is used to investigate the Raman response and the phonon band structure of Ge nanostructures. In particular, a supercell model is employed, in which along the [001] direction empty-column pores and nanowires are constructed preserving the crystalline Ge atomic structure. An advantage of this model is the interconnection between Ge nanocrystals in porous Ge and then, all the phonon states are delocalized. The results of both porous Ge and nanowires show a shift of the highest-energy Raman peak toward lower frequencies with respect to the Raman response of bulk crystalline Ge. This fact could be related to the confinement of phonons and is in good agreement with the experimental data. Finally, a detailed discussion of the dynamical matrix is given in the appendix section

Wafer Level Integration of a 24 GHz Differential SiGe-MMIC Oscillator with a Patch Antenna using BCB as a Dielectric Layer

This paper describes the wafer level inte-gration of a differential 24 GHz SiGe-MMIC oscillator including a buffer amplifier with a differentially driven patch antenna. The patch antenna is realized on 30 µm BCB (Benzo Cyclo Butene) used as a dielectric layer. The radiated power of the patch antenna driven by the oscillator is calculated based on measurements and the result is discussed