15,795 research outputs found

    Geometrical effects on spin injection: 3D spin drift diffusion model

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    We discuss a three-dimensional (3D) spin drift diffusion (SDD) model to inject spin from a ferromagnet (FM) to a normal metal (N) or semiconductor (SC). Using this model we investigate the problem of spin injection into isotropic materials like GaAs and study the effect of FM contact area and SC thickness on spin injection. We find that in order to achieve detectable spin injection a small contact area or thick SC samples are essential for direct contact spin injection devices. We investigate the use of thin metal films (Cu) proposed by S.B. Kumar et al. and show that they are an excellent substitute for tunnelling barriers (TB) in the regime of small contact area. Since most tunnelling barriers are prone to pinhole defects, we study the effect of pinholes in AlO tunnelling barriers and show that the reduction in the spin-injection ratio (γ\gamma) is solely due to the effective area of the pinholes and there is no correlation between the number of pinholes and the spin injection ratio.Comment: 5 pages, 6 figures. Accepted by JA

    Charge Transport in a Quantum Electromechanical System

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    We describe a quantum electromechanical system(QEMS) comprising a single quantum dot harmonically bound between two electrodes and facilitating a tunneling current between them. An example of such a system is a fullerene molecule between two metal electrodes [Park et al., Nature, 407, 57 (2000)]. The description is based on a quantum master equation for the density operator of the electronic and vibrational degrees of freedom and thus incorporates the dynamics of both diagonal (population) and off diagonal (coherence) terms. We derive coupled equations of motion for the electron occupation number of the dot and the vibrational degrees of freedom, including damping of the vibration and thermo-mechanical noise. This dynamical description is related to observable features of the system including the stationary current as a function of bias voltage.Comment: To appear in Phys. Rev. B., 13 pages, single colum

    Tunneling Qubit Operation on a Protected Josephson Junction Array

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    We discuss a protected quantum computation process based on a hexagon Josephson junction array. Qubits are encoded in the punctured array, which is topologically protected. The degeneracy is related to the number of holes. The topological degeneracy is lightly shifted by tuning the flux through specific hexagons. We also show how to perform single qubit operation and basic quantum gate operations in this system.Comment: 8 pages, 4 figures. The published version in Phys. Rev., A81(2010)01232

    When Things Matter: A Data-Centric View of the Internet of Things

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    With the recent advances in radio-frequency identification (RFID), low-cost wireless sensor devices, and Web technologies, the Internet of Things (IoT) approach has gained momentum in connecting everyday objects to the Internet and facilitating machine-to-human and machine-to-machine communication with the physical world. While IoT offers the capability to connect and integrate both digital and physical entities, enabling a whole new class of applications and services, several significant challenges need to be addressed before these applications and services can be fully realized. A fundamental challenge centers around managing IoT data, typically produced in dynamic and volatile environments, which is not only extremely large in scale and volume, but also noisy, and continuous. This article surveys the main techniques and state-of-the-art research efforts in IoT from data-centric perspectives, including data stream processing, data storage models, complex event processing, and searching in IoT. Open research issues for IoT data management are also discussed

    Manipulation of heat current by the interface between graphene and white graphene

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    We investigate the heat current flowing across the interface between graphene and hexagonal boron nitride (so-called white graphene) using both molecular dynamics simulation and nonequilibrium Green's function approaches. These two distinct methods discover the same phenomena that the heat current is reduced linearly with increasing interface length, and the zigzag interface causes stronger reduction of heat current than the armchair interface. These phenomena are interpreted by both the lattice dynamics analysis and the transmission function explanation, which both reveal that the localized phonon modes at interfaces are responsible for the heat management. The room temperature interface thermal resistance is about 7×10107\times10^{-10}m2^{2}K/W in zigzag interface and 3.5×10103.5\times10^{-10}m2^{2}K/W in armchair interface, which directly results in stronger heat reduction in zigzag interface. Our theoretical results provide a specific route for experimentalists to control the heat transport in the graphene and hexagonal boron nitride compound through shaping the interface between these two materials.Comment: accepted by EP

    Tuning the exciton g-factor in single InAs/InP quantum dots

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    Photoluminescence data from single, self-assembled InAs/InP quantum dots in magnetic fields up to 7 T are presented. Exciton g-factors are obtained for dots of varying height, corresponding to ground state emission energies ranging from 780 meV to 1100 meV. A monotonic increase of the g-factor from -2 to +1.2 is observed as the dot height decreases. The trend is well reproduced by sp3 tight binding calculations, which show that the hole g-factor is sensitive to confinement effects through orbital angular momentum mixing between the light-hole and heavy-hole valence bands. We demonstrate tunability of the exciton g-factor by manipulating the quantum dot dimensions using pyramidal InP nanotemplates
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