The Nature of Nearby Counterparts to Intermediate Redshift Luminous Compact Blue Galaxies II. CO Observations

We present the results of a single-dish beam-matched survey of the three lowest rotational transitions of CO in a sample of 20 local (D < 70 Mpc) Luminous Compact Blue Galaxies (LCBGs). These ~L*, blue, high surface brightness, starbursting galaxies were selected with the same criteria used to define LCBGs at higher redshifts. Our detection rate was 70%, with those galaxies having Lblue<7e9 Lsun no detected. We find the H2 masses of local LCBGs range from 6.6e6 to 2.7e9 Msun, assuming a Galactic CO-to-H2 conversion factor. Combining these results with our earlier HI survey of the same sample, we find that the ratio of molecular to atomic gas mass is low, typically 5-10%. Using a Large Velocity Gradient model, we find that the average gas conditions of the entire ISM in local LCBGs are similar to those found in the centers of star forming regions in our Galaxy, and nuclear regions of other galaxies. Star formation rates, determined from IRAS fluxes, are a few solar masses per year, much higher per unit dynamical mass than normal spirals. If this rate remains constant, the molecular hydrogen depletion time scales are short, 10-200 Myr.Comment: accepted for publication in the ApJ (vol 625

Loading of a surface-electrode ion trap from a remote, precooled source

We demonstrate loading of ions into a surface-electrode trap (SET) from a remote, laser-cooled source of neutral atoms. We first cool and load $\sim$ $10^6$ neutral $^{88}$Sr atoms into a magneto-optical trap from an oven that has no line of sight with the SET. The cold atoms are then pushed with a resonant laser into the trap region where they are subsequently photoionized and trapped in an SET operated at a cryogenic temperature of 4.6 K. We present studies of the loading process and show that our technique achieves ion loading into a shallow (15 meV depth) trap at rates as high as 125 ions/s while drastically reducing the amount of metal deposition on the trap surface as compared with direct loading from a hot vapor. Furthermore, we note that due to multiple stages of isotopic filtering in our loading process, this technique has the potential for enhanced isotopic selectivity over other loading methods. Rapid loading from a clean, isotopically pure, and precooled source may enable scalable quantum information processing with trapped ions in large, low-depth surface trap arrays that are not amenable to loading from a hot atomic beam

Ion traps fabricated in a CMOS foundry

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This is the first demonstration of scalable quantum computing hardware, in any modality, utilizing a commercial CMOS process, and it opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.Comment: 4 pages, 3 figure