18,054 research outputs found
Metallic characteristics in superlattices composed of insulators, NdMnO3/SrMnO3/LaMnO3
We report on the electronic properties of superlattices composed of three
different antiferromagnetic insulators, NdMnO3/SrMnO3/LaMnO3 grown on SrTiO3
substrates. Photoemission spectra obtained by tuning the x-ray energy at the Mn
2p -> 3d edge show a Fermi cut-off, indicating metallic behavior mainly
originating from Mn e_g electrons. Furthermore, the density of states near the
Fermi energy and the magnetization obey a similar temperature dependence,
suggesting a correlation between the spin and charge degrees of freedom at the
interfaces of these oxides
20 K superconductivity in heavily electron doped surface layer of FeSe bulk crystal
A superconducting transition temperature Tc as high as 100 K was recently
discovered in 1 monolayer (1ML) FeSe grown on SrTiO3 (STO). The discovery
immediately ignited efforts to identify the mechanism for the dramatically
enhanced Tc from its bulk value of 7 K. Currently, there are two main views on
the origin of the enhanced Tc; in the first view, the enhancement comes from an
interfacial effect while in the other it is from excess electrons with strong
correlation strength. The issue is controversial and there are evidences that
support each view. Finding the origin of the Tc enhancement could be the key to
achieving even higher Tc and to identifying the microscopic mechanism for the
superconductivity in iron-based materials. Here, we report the observation of
20 K superconductivity in the electron doped surface layer of FeSe. The
electronic state of the surface layer possesses all the key spectroscopic
aspects of the 1ML FeSe on STO. Without any interface effect, the surface layer
state is found to have a moderate Tc of 20 K with a smaller gap opening of 4
meV. Our results clearly show that excess electrons with strong correlation
strength alone cannot induce the maximum Tc, which in turn strongly suggests
need for an interfacial effect to reach the enhanced Tc found in 1ML FeSe/STO.Comment: 5 pages, 4 figure
Tuning electronic structures via epitaxial strain in Sr2IrO4 thin films
We have synthesized epitaxial Sr2IrO4 thin-films on various substrates and
studied their electronic structures as a function of lattice-strains. Under
tensile (compressive) strains, increased (decreased) Ir-O-Ir bond-angles are
expected to result in increased (decreased) electronic bandwidths. However, we
have observed that the two optical absorption peaks near 0.5 eV and 1.0 eV are
shifted to higher (lower) energies under tensile (compressive) strains,
indicating that the electronic-correlation energy is also affected by in-plane
lattice-strains. The effective tuning of electronic structures under
lattice-modification provides an important insight into the physics driven by
the coexisting strong spin-orbit coupling and electronic correlation.Comment: 9 pages, 5 figures, 1 tabl
Signatures of Electronic Correlations in Optical Properties of LaFeAsOF
Spectroscopic ellipsometry is used to determine the dielectric function of
the superconducting LaFeAsOF ( = 27 K) and undoped LaFeAsO
polycrystalline samples in the wide range 0.01-6.5 eV at temperatures 10 350 K. The free charge carrier response in both samples is heavily
damped with the effective carrier density as low as 0.0400.005 electrons
per unit cell. The spectral weight transfer in the undoped LaFeAsO associated
with opening of the pseudogap at about 0.65 eV is restricted at energies below
2 eV. The spectra of superconducting LaFeAsOF reveal a
significant transfer of the spectral weight to a broad optical band above 4 eV
with increasing temperature. Our data may imply that the electronic states near
the Fermi surface are strongly renormalized due to electron-phonon and/or
electron-electron interactions.Comment: 4 pages, 4 figures, units in Fig.2 adde
Quasiparticle Interference on the Surface of Topological Crystalline Insulator Pb(1-x)Sn(x)Se
Topological crystalline insulators represent a novel topological phase of
matter in which the surface states are protected by discrete point
group-symmetries of the underlying lattice. Rock-salt lead-tin-selenide alloy
is one possible realization of this phase which undergoes a topological phase
transition upon changing the lead content. We used scanning tunneling
microscopy (STM) and angle resolved photoemission spectroscopy (ARPES) to probe
the surface states on (001) PbSnSe in the topologically
non-trivial (x=0.23) and topologically trivial (x=0) phases. We observed
quasiparticle interference with STM on the surface of the topological
crystalline insulator and demonstrated that the measured interference can be
understood from ARPES studies and a simple band structure model. Furthermore,
our findings support the fact that PbSnSe and PbSe have
different topological nature.Comment: 5 pages, 4 figure
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