Photo-induced spin filtering in a double quantum dot

We investigate the spin-resolved electron dynamics in a double quantum dot driven by ultrafast asymmetric electromagnetic pulses. Using a analytical model we show that applying an appropriate pulse sequence allows to control coherently the spin degree of freedom on the femtosecond time scale. It can be achieved that the spin-up state is localized in a selected quantum dot while the spin-down state remains in the other dot. We show that this photo-induced spin-dependent separation can be maintained for a desired period of time.Comment: shortened, revised version 2 article published at Appl. Phys. Let

Binding energy of shallow donors in a quantum well in the presence of a tilted magnetic field

We present results of variational calculations of the binding energy of a neutral donor in a quantum well in the presence of a magnetic field tilted relative to the QW plane. Assuming that the donor is located in the center of the QW, we perform calculations for parameters typical of a II-VI wide-gap semiconductor heterostructure, using as an example the case of a rectangular CdTe quantum well with CdMgTe barriers. We present the dependence of the binding energy of a neutral donor on the tilt angle and on the magnitude of the applied magnetic filed. As a key result, we show that measurement of the binding energy of a donor at two angles of the magnetic field with respect to the quantum well plane can be used to unambiguously determined the conduction band offset of the materials building up heterostructure.Comment: 6 pages, 5 figure

Dirac and Klein-Gordon particles in one-dimensional periodic potentials

We evaluate the dispersion relation for massless fermions, described by the Dirac equation, and for zero-spin bosons, described by the Klein-Gordon equation, moving in two dimensions and in the presence of a one-dimensional periodic potential. For massless fermions the dispersion relation shows a zero gap for carriers with zero momentum in the direction parallel to the barriers in agreement with the well-known "Klein paradox". Numerical results for the energy spectrum and the density of states are presented. Those for fermions are appropriate to graphene in which carriers behave relativistically with the "light speed" replaced by the Fermi velocity. In addition, we evaluate the transmission through a finite number of barriers for fermions and zero-spin bosons and relate it with that through a superlattice.Comment: 9 pages, 12 figure

Static polarizability of two-dimensional hole gases

We have calculated the density-density (Lindhard) response function of a homogeneous two-dimensional (2D) hole gas in the static (omega=0) limit. The bulk valence-band structure comprising heavy-hole (HH) and light-hole (LH) states is modeled using Luttinger's kdotp approach within the axial approximation. We elucidate how, in contrast to the case of conduction electrons, the Lindhard function of 2D holes exhibits unique features associated with (i) the confinement-induced HH-LH energy splitting and (ii) the HH-LH mixing arising from the charge carriers' in-plane motion. Implications for the dielectric response and related physical observables are discussed.Comment: 11 pages, 3 figures, IOP latex style, v2: minor changes, to appear in NJ

Theory of valley-orbit coupling in a Si/SiGe quantum dot

Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular magnetic fields, and (most importantly for valley coupling) the small local tilt of the quantum well interface away from the crystallographic axes. In absence of a tilt, valley splitting occurs only between pairs of states with the same orbital quantum numbers. However, tilting is ubiquitous in conventional silicon heterostructures, leading to valley-orbit coupling. In this context, "valley splitting" is no longer a well defined concept, and the quantity of merit for qubit applications becomes the ground state gap. For typical dots used as qubits, a rich energy spectrum emerges, as a function of magnetic field, tilt angle, and orbital quantum number. Numerical and analytical solutions are obtained for the ground state gap and for the mixing fraction between the ground and excited states. This mixing can lead to valley scattering, decoherence, and leakage for Si spin qubits.Comment: 18 pages, including 4 figure

Lande-like formula for the g factors of hole-nanowire subband edges

We have analyzed theoretically the Zeeman splitting of hole-quantum-wire subband edges. As is typical for any bound state, their g factor depends on both an intrinsic g factor of the material and an additional contribution arising from a finite bound-state orbital angular momentum. We discuss the quantum-confinement-induced interplay between bulk-material and orbital effects, which is nontrivial due to the presence of strong spin-orbit coupling. A compact analytical formula is provided that elucidates this interplay and can be useful for predicting Zeeman splitting in generic hole-wire geometries.Comment: 4 pages, 2 figure

Physical mechanisms of interface-mediated intervalley coupling in Si

The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt change in the conduction band minimum leads to intervalley scattering. We present a theoretical study of the interface-induced valley splitting in Si that provides simple criteria for optimal fabrication parameters to maximize this splitting. Our work emphasizes the relevance of different interface-related properties to the valley splitting.Comment: 4 pages, revised versio

Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.Comment: 4 pages, Revtex. 4 PostScript figures in an uuencoded compressed file available upon request. Phys. Rev.B, in pres

Longitudinal spin transport in diluted magnetic semiconductor superlattices: the effect of the giant Zeeman splitting

Longitudinal spin transport in diluted magnetic semiconductor superlattices is investigated theoretically. The longitudinal magnetoconductivity (MC) in such systems exhibits an oscillating behavior as function of an external magnetic field. In the weak magnetic field region the giant Zeeman splitting plays a dominant role which leads to a large negative magnetoconductivity. In the strong magnetic field region the MC exhibits deep dips with increasing magnetic field. The oscillating behavior is attributed to the interplay between the discrete Landau levels and the Fermi surface. The decrease of the MC at low magnetic field is caused by the $s-d$ exchange interaction between the electron in the conduction band and the magnetic ions.Comment: 6 pages, 9 figures, submitted to Phys. Rev.

Two-Dimensional Electron Gas in InGaAs/InAlAs Quantum Wells

We designed and performed low temperature DC transport characterization studies on two-dimensional electron gases confined in lattice-matched In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As quantum wells grown by molecular beam epitaxy on InP substrates. The nearly constant mobility for samples with the setback distance larger than 50nm and the similarity between the quantum and transport life-time suggest that the main scattering mechanism is due to short range scattering, such as alloy scattering, with a scattering rate of 2.2 ps$^{-1}$. We also obtain the Fermi level at the In$_{0.53}$Ga$_{0.47}$As/In$_{0.52}$Al$_{0.48}$As surface to be 0.36eV above the conduction band, when fitting our experimental densities with a Poisson-Schr\"odinger model.Comment: Accepted in Applied Physics Letter