Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

The energy position of the optical absorption edge and the free carrier populations in InxGa1-xN ternary alloys can be controlled using high energy 4He+ irradiation. The blue shift of the absorption edge after irradiation in In-rich material (x > 0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical absorption measurements show that the irradiation-introduced native defects are inside the bandgap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical absorption edge and the carrier populations in InxGa1-xN are in excellent agreement with the predictions of the amphoteric defect model

Aging and Fracture of Human Cortical Bone and Tooth Dentin

Mineralized tissues, such as bone and tooth dentin, serve as structural materials in the human body and, as such, have evolved to resist fracture. In assessing their quantitative fracture resistance or toughness, it is important to distinguish between intrinsic toughening mechanisms which function ahead of the crack tip, such as plasticity in metals, and extrinsic mechanisms which function primarily behind the tip, such as crack bridging in ceramics. Bone and dentin derive their resistance to fracture principally from extrinsic toughening mechanisms which have their origins in the hierarchical microstructure of these mineralized tissues. Experimentally, quantification of these toughening mechanisms requires a crack-growth resistance approach, which can be achieved by measuring the crack-driving force, e.g., the stress intensity, as a function of crack extension ("R-curve approach"). Here this methodology is used to study of the effect of aging on the fracture properties of human cortical bone and human dentin in order to discern the microstructural origins of toughness in these materials

Fatigue threshold R-curves predict small crack fatigue behavior of bridging toughened materials

Small crack fatigue is a widely recognized problem in the fatigue of materials; however, there has been limited progress in developing methods for predicting small crack fatigue behavior. In this paper, small crack effects due to crack bridging are addressed. A fatigue threshold R-curve was measured for a 99.5% pure polycrystalline alumina using standard compact tension specimens and it was used to 1) determine the bridging stress profile for the material and 2) make fatigue endurance strength predictions for realistic semi-elliptical surface cracks. Furthermore, is has been shown that the fatigue threshold R-curve can equivalently be determined by measuring the bridging stress distribution, in this case using fluorescence spectroscopy, using only a long crack compact tension specimen without the need for difficult small crack experiments. It is expected that this method will be applicable to a wide range of bridging toughened materials, including composites, toughened ceramics, intermetallics, and multi-phase materials.Keywords: fracture, toughness, fatigue, crack bridgingKeywords: fracture, toughness, fatigue, crack bridgin

A nanoporous capacitive electrochemical ratchet for continuous ion separations

Directed ion transport in liquid electrolyte solutions underlies numerous phenomena in nature and industry including neuronal signaling, photosynthesis and respiration, electrodialysis for desalination, and recovery of critical materials. Here, we report the first demonstration of an ion pump that drives ions in aqueous electrolytes against a force using a capacitive ratchet mechanism. Our ratchet-based ion pumps utilize the non-linear capacitive nature of electric double layers for symmetry breaking which drives a net time-averaged ion flux in response to a time varying input signal. Since the devices are driven by a non-linear charging and discharging of double layers, they do not require redox reactions for continual operation. Ratchet-based ion pumps were fabricated by depositing thin gold layers on the two surfaces of anodized alumina wafers, forming nanoporous capacitor-like structures. Pumping occurs when a wafer is placed between two compartments of aqueous electrolyte and the electric potential across it is modulated. In response to various input signals, persistent ionic voltages and sustained currents were observed, consistent with net unidirectional ion transport, even though conduction through the membrane was non-rectifying. The generated ionic power was used in conjunction with an additional shunt pathway to demonstrate electrolyte demixing

Band offset determination of the GaAs/GaAsN interface using the DFT method

The GaAs/GaAsN interface band offset is calculated from first principles. The electrostatic potential at the core regions of the atoms is used to estimate the interface potential and align the band structures obtained from respective bulk calculations. First, it is shown that the present method performs well on the well-known conventional/conventional AlAs/GaAs (001) superlattice system. Then the method is applied to a more challenging nonconventional/conventional GaAsN/GaAs (001) system, and consequently type I band lineup and valence-band offset of about 35 meV is obtained for nitrogen concentration of about 3 %, in agreement with the recent experiments. We also investigate the effect of strain on the band lineup. For the GaAsN layer longitudinally strained to the GaAs lattice constant, the type II lineup with a nearly vanishing band offset is found, suggesting that the anisotropic strain along the interface is the principal cause for the often observed type I lineup

Highly Mismatched Alloys for Intermediate Band Solar Cells

It has long been recognized that the introduction of a narrow band of states in a semiconductor band gap could be used to achieve improved power conversion efficiency in semiconductor-based solar cells. The intermediate band would serve as a ''stepping stone'' for photons of different energy to excite electrons from the valence to the conduction band. An important advantage of this design is that it requires formation of only a single p-n junction, which is a crucial simplification in comparison to multijunction solar cells. A detailed balance analysis predicts a limiting efficiency of more than 50% for an optimized, single intermediate band solar cell. This is higher than the efficiency of an optimized two junction solar cell. Using ion beam implantation and pulsed laser melting we have synthesized Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys with x<0.03. These highly mismatched alloys have a unique electronic structure with a narrow oxygen-derived intermediate band. The width and the location of the band is described by the Band Anticrossing model and can be varied by controlling the oxygen content. This provides a unique opportunity to optimize the absorption of solar photons for best solar cell performance. We have carried out systematic studies of the effects of the intermediate band on the optical and electrical properties of Zn{sub 1-y}Mn{sub y}O{sub x}Te{sub 1-x} alloys. We observe an extension of the photovoltaic response towards lower photon energies, which is a clear indication of optical transitions from the valence to the intermediate band

A Schottky top-gated two-dimensional electron system in a nuclear spin free Si/SiGe heterostructure

We report on the realization and top-gating of a two-dimensional electron system in a nuclear spin free environment using 28Si and 70Ge source material in molecular beam epitaxy. Electron spin decoherence is expected to be minimized in nuclear spin-free materials, making them promising hosts for solid-state based quantum information processing devices. The two-dimensional electron system exhibits a mobility of 18000 cm2/Vs at a sheet carrier density of 4.6E11 cm-2 at low temperatures. Feasibility of reliable gating is demonstrated by transport through split-gate structures realized with palladium Schottky top-gates which effectively control the two-dimensional electron system underneath. Our work forms the basis for the realization of an electrostatically defined quantum dot in a nuclear spin free environment.Comment: 8 pages, 3 figure

Photo-oxidation of Ge Nanocrystals: Kinetic Measurements by InSitu Raman Spectroscopy

Ge nanocrystals are formed in silica by ion beam synthesis and are subsequently exposed by selective HF etching of the silica. Under ambient conditions, the exposed nanocrystals are stable after formation of a protective native oxide shell of no more than a few monolayers. However, under visible laser illumination at room temperature and in the presence of O{sub 2}, the nanocrystals rapidly oxidize. The oxidation rate was monitored by measuring the Raman spectra of the Ge nanocrystals in-situ. The intensity ratio of the anti-Stokes to the Stokes line indicated that no significant laser-induced heating of illuminated nanocrystals occurs. Therefore, the oxidation reaction rate enhancement is due to a photo-chemical process. The oxidation rate varies nearly linearly with the logarithm of the laser intensity, and at constant laser intensity the rate increases with increasing photon energy. These kinetic measurements, along with the power dependencies, are described quantitatively by an electron active oxidation mechanism involving tunneling of optically excited electrons through the forming oxide skin and subsequent transport of oxygen ions to the Ge nanocrystal surface

Relation between structural and optical properties of InN andInxGa1-xN thin films

Transmission Electron Microscopy (TEM) and opticalmeasurements obtained from InN and In1-xGaxNfilms (0<x<0.54)grown by Molecular Beam Epitaxy are presented. Energy gaps measuredbyabsorption, PR, and PL for InN films grown on c-plane Al2O3 were in therange of 0.7 eV. No In or otherinclusions were observed in these films,ruling out the possibility of a strong Mie scattering mechanism. IntheIn1-xGaxN films the relationship between the structural properties andthe optical properties, inparticular the presence or absence of a Stokesshift between absorption and PL, is discussed. TEM studiesshow that highquality layers do not have a Stokes shift. Some films had compositionalordering; thesefilms also showed a shift between absorption edge andluminescence peak

Multiband GaNAsP Quaternary Alloys

We have synthesized GaN{sub x}As{sub 1-y}P{sub y} alloys (x {approx} 0.3-1% and y = 0-0.4) using nitrogen N ion implantation into GaAsP epilayers followed by pulsed laser melting and rapid thermal annealing techniques. As predicted by the band anticrossing model, the incorporation of N splits the conduction band (E{sub M}) of the GaAs{sub 1-y}P{sub y} substrate, and strong optical transitions from the valence band to the lower (E{sub -}) and upper (E{sub +}) conduction subbands are observed. The relative strengths of the E{sub -} and E{sub +} transition change as the localized N level E{sub N} emerges from the conduction band forming narrow intermediate band for y &gt; 0.3. The results show that GaN{sub x}As{sub 1-x-y}P{sub y} alloys with y &gt; 0.3 is a three band semiconductor alloy with potential applications for high-efficiency intermediate band solar cells