Magnetic patterning of (Ga,Mn)As by hydrogen passivation

We present an original method to magnetically pattern thin layers of (Ga,Mn)As. It relies on local hydrogen passivation to significantly lower the hole density, and thereby locally suppress the carrier-mediated ferromagnetic phase. The sample surface is thus maintained continuous, and the minimal structure size is of about 200 nm. In micron-sized ferromagnetic dots fabricated by hydrogen passivation on perpendicularly magnetized layers, the switching fields can be maintained closer to the continuous film coercivity, compared to dots made by usual dry etch techniques

Field-induced domain wall propagation: beyond the one-dimensional model

We have investigated numerically the field-driven propagation of perpendicularly magnetized ferromagnetic layers. It was then compared to the historical one-dimensional domain wall (DW) propagation model widely used in spintronics studies of magnetic nanostructures. In the particular regime of layer thickness (h) of the order of the exchange length, anomalous velocity peaks appear in the precessional regime, their shape and position shifting with h. This has also been observed experimentally. Analyses of the simulations show a distinct correlation between the curvature of the DW and the twist of the magnetization vector within it, and the velocity peak. Associating a phenomenological description of this twist with a four-coordinate DW propagation model, we reproduce very well these kinks and show that they result from the torque exerted by the stray field created by the domains on the twisted magnetization. The position of the peaks is well predicted from the DW's first flexural mode frequency, and depends strongly on the layer thickness. Comparison of the proposed model to DW propagation data obtained on dilute semiconductor ferromagnets GaMnAs and GaMnAsP sheds light on the origin of the measured peaks

Irreversible magnetization switching using surface acoustic waves

An analytical and numerical approach is developped to pinpoint the optimal experimental conditions to irreversibly switch magnetization using surface acoustic waves (SAWs). The layers are magnetized perpendicular to the plane and two switching mechanisms are considered. In precessional switching, a small in-plane field initially tilts the magnetization and the passage of the SAW modifies the magnetic anisotropy parameters through inverse magneto-striction, which triggers precession, and eventually reversal. Using the micromagnetic parameters of a fully characterized layer of the magnetic semiconductor (Ga,Mn)(As,P), we then show that there is a large window of accessible experimental conditions (SAW amplitude/wave-vector, field amplitude/orientation) allowing irreversible switching. As this is a resonant process, the influence of the detuning of the SAW frequency to the magnetic system's eigenfrequency is also explored. Finally, another - non-resonant - switching mechanism is briefly contemplated, and found to be applicable to (Ga,Mn)(As,P): SAW-assisted domain nucleation. In this case, a small perpendicular field is applied opposite the initial magnetization and the passage of the SAW lowers the domain nucleation barrier.Comment: 11 pages, 4 figure

Determination of the micromagnetic parameters in (Ga,Mn)As using domain theory

The magnetic domain structure and magnetic properties of a ferromagnetic (Ga,Mn)As epilayer with perpendicular magnetic easy-axis are investigated. We show that, despite strong hysteresis, domain theory at thermodynamical equilibrium can be used to determine the micromagnetic parameters. Combining magneto-optical Kerr microscopy, magnetometry and ferromagnetic resonance measurements, we obtain the characteristic parameter for magnetic domains $\lambda_c$, the domain wall width and specific energy, and the spin stiffness constant as a function of temperature. The nucleation barrier for magnetization reversal and the Walker breakdown velocity for field-driven domain wall propagation are also estimated

Coupling and induced depinning of magnetic domain walls in adjacent spin valve nanotracks

The magnetostatic interaction between magnetic domain walls (DWs) in adjacent nanotracks has been shown to produce strong inter-DW coupling and mutual pinning. In this paper, we have used electrical measurements of adjacent spin-valve nanotracks to follow the positions of interacting DWs. We show that the magnetostatic interaction between DWs causes not only mutual pinning, as observed till now, but that a travelling DW can also induce the depinning of DWs in near-by tracks. These effects may have great implications for some proposed high density magnetic devices (e.g. racetrack memory, DW logic circuits, or DW-based MRAM).Comment: The following article has been accepted by the Journal of Applied Physic

Magnetic properties and domain structure of (Ga,Mn)As films with perpendicular anisotropy

The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted ferromagnetic semiconductor. The magnetic layer was grown under tensile strain on a relaxed GaInAs buffer layer using a procedure that limits the density of threading dislocations. Magnetometry, magneto-transport and polar magneto-optical Kerr effect (PMOKE) measurements reveal the high quality of this layer, in particular through its high Curie temperature (130 K) and well-defined magnetic anisotropy. We show that magnetization reversal is initiated from a limited number of nucleation centers and develops by easy domain wall propagation. Furthermore, MOKE microscopy allowed us to characterize in detail the magnetic domain structure. In particular we show that domain shape and wall motion are very sensitive to some defects, which prevents a periodic arrangement of the domains. We ascribed these defects to threading dislocations emerging in the magnetic layer, inherent to the growth mode on a relaxed buffer

Universal conductance fluctuations in epitaxial GaMnAs ferromagnets: structural and spin disorder

Mesoscopic transport measurements reveal a large effective phase coherence length in epitaxial GaMnAs ferromagnets, contrary to usual 3d-metal ferromagnets. Universal conductance fluctuations of single nanowires are compared for epilayers with a tailored anisotropy. At large magnetic fields, quantum interferences are due to structural disorder only, and an unusual behavior related to hole-induced ferromagnetism is evidenced, for both quantum interferences and decoherence. At small fields, phase coherence is shown to persist down to zero field, even in presence of magnons, and an additional spin disorder contribution to quantum interferences is observed under domain walls nucleation.Comment: 15 pages, 4 figure

Ethoxyfagaronine, a synthetic analogue of fagaronine that inhibits vascular endothelial growth factor-1, as a new anti-angiogeneic agent

Angiogenesis plays a pivotal role in tumorigenesis and also contributes to the pathogenesis of hematologic malignancies. A number of plant compounds have shown efficacy in preclinical and clinical studies and some of them possess an anti-angiogenic activity. Our present findings report anti-angiogenic activities of ethoxyfagaronine (etxfag), a synthetic derivative of fagaronine. Once determined the non-cytotoxic concentration of etxfag, we showed that the drug inhibits VEGF-induced angiogenesis in a Matrigel™ plug assay and suppresses ex vivo sprouting from VEGF-treated aortic rings. Each feature leading to neovascularization was then investigated and results demonstrate that etxfag prevents VEGF-induced migration and tube formation in human umbilical vein endothelial cells (HUVEC). Moreover, etxfag also suppresses VEGF-induced VEGFR-2 phosphorylation and inhibits FAK phosphorylation at Y-861 as well as focal adhesion complex turnover. Beside these effects, etxfag modifies MT1-MMP localization at the endothelial cell membrane. Finally, immunoprecipitation assay revealed that etxfag decreases VEGF binding to VEGFR-2. As we previously reported that etxfag is able to prevent leukemic cell invasiveness and adhesion to fibronectin, all together our data collectively support the anti-angiogenic activities of etxfag which could represent an additional approach to current anti-cancer therapies