OPTICAL CONSTANTS OF LAYER STRUCTURES FROM ELLIPSOMETRIC DATA

Il est possible de calculer les constantes optiques n⊥, k⊥ et n||, n|| d'un cristal uniaxe, en utilisant des mesures ellipsométriques sur un plan perpendiculaire à l'axe optique, avec l'aide d'un algorithme très efficace. Cette méthode a été appliquée au composé β-GaSe pour des longueurs d'onde de 3600 Å à 6800 Å.With the help of an efficient algorithm it is possible to calculate the optical constants n⊥, k⊥ and n||, k|| of an uniaxial crystal using ellipsometric measurements on a plane perpendicular to the optic axis (the cleavage plane). This method has been applied to β-GaSe compound in the spectral region 3600 Å to 6800 Å

STRUCTURAL AND PHOTOELECTRONIC PROPERTIES OF THALLIUM INDIUM SULFIDE

A structural investigation by Transmission Electron Microscopy confirmed the presence of planar faults parallel to the (001)tetr-plane of TlInS2. Their density corresponds to a mean repeat distance of about eight times the lattice parameter c. On the other hand, two energy levels forming two subbands and acting as hole traps at 0.028 and 0.050 eV above the valence band edge of TlInS2 were determined by an analysis of modulated photocurrents induced by an intensity modulated light beam. Their capture coefficients were of the order of magnitude 10(-13) and 10(-15) cm3 s-1 at 300 K, respectively