Eg versus x relation from photoluminescence and electron microprobe investigations in p-type Hg1−xCdxTe (0.35 =< x =< 0.7)

Combined photoluminescence (at 10 T 300 K) and electron microprobe investigations have been carried out with HgCdTe samples grown from the melt or from solution. By exciting the samples through metallic masks with 200 μm diameter holes fixed with respect to the sample care was taken to pick-up both characteristic X-ray radiation as well as the photoluminescence from the same sample area. The Eg versus x relation determined in this way at T = 30 K has been compared with data from the interband absorption edge by other authors

Ervilha: uma nova opção de alimento para suínos.

bitstream/item/85486/1/DCOT-318.pd

Near-field dynamics of broad area diode laser at very high pump levels

Near-field properties of the emission of broad area semiconductor diode lasers under extremely high pumping of up to ∼50 times the threshold are investigated. A transition from a gain to thermally-induced index guiding is shown under operation with single pulses of 300 ns duration. At highest output powers, catastrophic optical damage is observed which is studied in conjunction with the evolution of time-averaged filamentary near-field properties. Dynamics of the process is resolved on a picosecond time scale

Role of hole confinement in the recombination properties of InGaN quantum structures

We study the isolated contribution of hole localization for well-known charge carrier recombination properties observed in conventional, polar InGaN quantum wells (QWs). This involves the interplay of charge carrier localization and non-radiative transitions, a non-exponential decay of the emission and a specific temperature dependence of the emission, denoted as “s-shape”. We investigate two dimensional In0.25Ga0.75N QWs of single monolayer (ML) thickness, stacked in a superlattice with GaN barriers of 6, 12, 25 and 50 MLs. Our results are based on scanning and high-resolution transmission electron microscopy (STEM and HR-TEM), continuous-wave (CW) and time-resolved photoluminescence (TRPL) measurements as well as density functional theory (DFT) calculations. We show that the recombination processes in our structures are not affected by polarization fields and electron localization. Nevertheless, we observe all the aforementioned recombination properties typically found in standard polar InGaN quantum wells. Via decreasing the GaN barrier width to 6 MLs and below, the localization of holes in our QWs is strongly reduced. This enhances the influence of non-radiative recombination, resulting in a decreased lifetime of the emission, a weaker spectral dependence of the decay time and a reduced s-shape of the emission peak. These findings suggest that single exponential decay observed in non-polar QWs might be related to an increasing influence of non-radiative transitions

Формирование предпринимательских умений студентов инженерного вуза

Представлена методика формирования предпринимательских умений студентов инженерного вуза на основе практико-ориентированной подготовки, способствующей внедренческой деятельности инженера в современных условиях. Проведен анализ состояния проблемы формирования предпринимательских умений в России. Определены педагогические условия, способствующие формированию готовности студентов технического университета к комплексной инженерной деятельности. Сформулировано понятие предпринимательской компетенции инженера. Обосновано эффективное применение метода проектов для формирования предпринимательских умений студентов инженерного вуза. Представлена модель формирования предпринимательских умений студентов инженерного вуза с учетом проектной деятельности инженера.The developing methods of entrepreneurial competences of engineering students, based on the practice-oriented training to encourage an implemental activity of an engineer in the modern context has been presented in the report. The analysis of the problem of entrepreneurial competencies development in Russia has been carried out. The pedagogical conditions encouraging the commitment of the technical university students for an integrated engineering activity has been defined. The concept of entrepreneurial competencies of an engineer has been stated. An effective appliance of project methods to develop entrepreneurial competences of the engineering university students has been proved. There has been presented the development model of entrepreneurial competences of engineering students

Comportamento de genótipos de canola em Maringá em 2003.

bitstream/CNPT-2010/40480/1/p-co115.pd

Vacancy defects in epitaxial thin film CuGaSe2 and CuInSe2

Epitaxial thin film CuGaSe2 and CuInSe2 samples grown on GaAs substrates with varying [Cu]/[Ga,In] ratios were studied using positron annihilation Doppler-broadening spectroscopy and were compared to bulk crystals. We find both Cu monovacancies and Cu-Se divacancies in CuInSe2, whereas, in CuGaSe2, the only observed vacancy defect is the Cu-Se divacancy.Peer reviewe