29,071 research outputs found

    Fiber Based Multiple-Access Optical Frequency Dissemination

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    We demonstrate a fiber based multiple-access optical frequency dissemination scheme. Without using any additional laser sources, we reproduce the stable disseminated frequency at an arbitrary point of fiber link. Relative frequency stability of 3E10^{-16}/s and 4E10^{-18}/10^4s is obtained. A branching fiber network for highly-precision synchronization of optical frequency is made possible by this method and its applications are discussed.Comment: 5 pages, 3 figure

    Impurity scattering and Friedel oscillations in mono-layer black phosphorus

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    We study the effect of impurity scattering effect in black phosphorurene (BP) in this work. For single impurity, we calculate impurity induced local density of states (LDOS) in momentum space numerically based on tight-binding Hamiltonian. In real space, we calculate LDOS and Friedel oscillation analytically. LDOS shows strong anisotropy in BP. Many impurities in BP are investigated using TT-matrix approximation when the density is low. Midgap states appear in band gap with peaks in DOS. The peaks of midgap states are dependent on impurity potential. For finite positive potential, the impurity tends to bind negative charge carriers and vise versa. The infinite impurity potential problem is related to chiral symmetry in BP

    Sequential nature of damage annealing and activation in implanted GaAs

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    Rapid thermal processing of implanted GaAs reveals a definitive sequence in the damage annealing and the electrical activation of ions. Removal of implantation-induced damage and restoration of GaAs crystallinity occurs first. Irrespective of implanted species, at this stage the GaAs is n-type and highly resistive with almost ideal values of electron mobility. Electrical activation is achieved next when, in a narrow anneal temperature window, the material becomes n- or p-type, or remains semi-insulating, commensurate to the chemical nature of the implanted ion. Such a two-step sequence in the electrical doping of GaAs by ion implantation may be unique of GaAs and other compound semiconductors

    The effect of large‐scale shear‐velocity heterogeneity on SS precursor amplitudes

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    Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/102095/1/grl51158.pd

    Breaking Discrete Symmetries in Broken Gauge Theories

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    We study the spontaneous breaking of discrete symmetries in theories with broken gauge symmetry. The intended application is to CP breaking in theories with gauged flavor symmetries, but the analysis described here is preliminary. We dispense with matter fields and take the gauge theory to be weakly coupled and broken spontaneously by unspecified, short-distance forces. We develop an effective-field-theory description of the resultant low energy theory, and ask whether this theory by itself can describe the subsequent breaking of discrete symmetries. We conclude that this can happen depending on the parameters of the effective theory, and that the intrinsic violation is naturally of order unity.Comment: 9 pages, 1 figure, corrected typos, added a referenc
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