Radiation induced zero-resistance states in GaAs/AlGaAs heterostructures: Voltage-current characteristics and intensity dependence at the resistance minima

High mobility two-dimensional electron systems exhibit vanishing resistance over broad magnetic field intervals upon excitation with microwaves, with a characteristic reduction of the resistance with increasing radiation intensity at the resistance minima. Here, we report experimental results examining the voltage - current characteristics, and the resistance at the minima vs. the microwave power. The findings indicate that a non-linear V-I curve in the absence of microwave excitation becomes linearized under irradiation, unlike expectations, and they suggest a similarity between the roles of the radiation intensity and the inverse temperature.Comment: 3 color figures; publishe

Electrical Transport in High Quality Graphene pnp Junctions

We fabricate and investigate high quality graphene devices with contactless, suspended top gates, and demonstrate formation of graphene pnp junctions with tunable polarity and doping levels. The device resistance displays distinct oscillations in the npn regime, arising from the Fabry-Perot interference of holes between the two pn interfaces. At high magnetic fields, we observe well-defined quantum Hall plateaus, which can be satisfactorily fit to theoretical calculations based on the aspect ratio of the device.Comment: to appear in a special focus issue in New Journal of Physic

Quantum Hall Effect in a Two-Dimensional Electron System Bent by 90 Degrees

Using a new MBE growth technique, we fabricate a two-dimensional electron system which is bent around an atomically sharp 90 degree corner. In the quantum Hall regime under tilted magnetic fields, we can measure equilibration between both co- and counter-propagating edge channels of arbitrary filling factor ratio. We present here 4-point magnetotransport characterization of the corner junction with filling factor combinations which can all be explained using the standard Landauer-Buttiker edge channel picture. The success of this description confirms the realization of a new type of quantum Hall edge geometry.Comment: 4 pages, figures included Typographical errors corrected, reference adde

Novel metallic and insulating states at a bent quantum Hall junction

A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.Comment: 5 pages, 4 figures, text + figs revised for clarit

How branching can change the conductance of ballistic semiconductor devices

We demonstrate that branching of the electron flow in semiconductor nanostructures can strongly affect macroscopic transport quantities and can significantly change their dependence on external parameters compared to the ideal ballistic case even when the system size is much smaller than the mean free path. In a corner-shaped ballistic device based on a GaAs/AlGaAs two-dimensional electron gas we observe a splitting of the commensurability peaks in the magnetoresistance curve. We show that a model which includes a random disorder potential of the two-dimensional electron gas can account for the random splitting of the peaks that result from the collimation of the electron beam. The shape of the splitting depends on the particular realization of the disorder potential. At the same time magnetic focusing peaks are largely unaffected by the disorder potential.Comment: accepted for publication in Phys. Rev.

Composite fermions in periodic and random antidot lattices

The longitudinal and Hall magnetoresistance of random and periodic arrays of artificial scatterers, imposed on a high-mobility two-dimensional electron gas, were investigated in the vicinity of Landau level filling factor ν=1/2. In periodic arrays, commensurability effects between the period of the antidot array and the cyclotron radius of composite fermions are observed. In addition, the Hall resistance shows a deviation from the anticipated linear dependence, reminiscent of quenching around zero magnetic field. Both effects are absent for random antidot lattices. The relative amplitude of the geometric resonances for opposite signs of the effective magnetic field and its dependence on illumination illustrate enhanced soft wall effects for composite fermions

Domain Formation in v=2/3 Fractional Quantum Hall Systems

We study the domain formation in the v=2/3 fractional quantum Hall systems basing on the density matrix renormalization group (DMRG) analysis. The ground-state energy and the pair correlation functions are calculated for various spin polarizations. The results confirm the domain formation in partially spin polarized states, but the presence of the domain wall increases the energy of partially spin polarized states and the ground state is either spin unpolarized state or fully spin polarized state depending on the Zeeman energy. We expect coupling with external degrees of freedom such as nuclear spins is important to reduce the energy of partially spin polarized state.Comment: 7 pages, submitted to J. Phys. Soc. Jp

Electrically-Controlled Nuclear Spin Polarization and Relaxation by Quantum-Hall states

We investigate interactions between electrons and nuclear spins by using the resistance (Rxx) peak which develops near filling factor n = 2/3 as a probe. By temporarily tuning n to a different value, ntemp, with a gate, the Rxx peak is shown to relax quickly on both sides of ntemp = 1. This is due to enhanced nuclear spin relaxation by Skyrmions, and demonstrates the dominant role of nuclear spin in the transport anomaly near n = 2/3. We also observe an additional enhancement in the nuclear spin relaxation around n = 1/2 and 3/2, which suggests a Fermi sea of partially-polarized composite fermions.Comment: 6 pages, 3 figure