The Facts - Your Choice: STD Risk Information for the Adolescent Patient

Sexual health education is one of the factors that has led to a dramatic drop in adolescent pregnancy since the 1990s. Paradoxically, though, rates of sexually transmitted-infections (STI) in the adolescent population during that period soared. The educational deficit appears to be a lack of understanding of both short- and long-term health risks that STIs pose, and conflation of contraceptive effectiveness with STI prevention. This project sought to develop an inexpensive, office-based education product that would aid practitioner-adolescent patient discussion and facilitate follow-up in the family medicine setting.https://scholarworks.uvm.edu/fmclerk/1304/thumbnail.jp

Coupling of a locally implanted rare-earth ion ensemble to a superconducting micro-resonator

We demonstrate the coupling of rare-earth ions locally implanted in a substrate (Gd$^{3+}$ in Al$_{2}$O$_{3}$) to a superconducting NbN lumped-element micro-resonator. The hybrid device is fabricated by a controlled ion implantation of rare-earth ions in well-defined micron-sized areas, aligned to lithographically defined micro-resonators. The technique does not degrade the internal quality factor of the resonators which remain above $10^{5}$. Using microwave absorption spectroscopy we observe electron-spin resonances in good agreement with numerical modelling and extract corresponding coupling rates of the order of $1$ MHz and spin linewidths of $50 - 65$ MHz.Comment: 4 pages, 2 Figure

Highly conductive Sb-doped layers in strained Si

The ability to create stable, highly conductive ultrashallow doped regions is a key requirement for future silicon-based devices. It is shown that biaxial tensile strain reduces the sheet resistance of highly doped n-type layers created by Sb or As implantation. The improvement is stronger with Sb, leading to a reversal in the relative doping efficiency of these n-type impurities. For Sb, the primary effect is a strong enhancement of activation as a function of tensile strain. At low processing temperatures, 0.7% strain more than doubles Sb activation, while enabling the formation of stable, ~10-nm-deep junctions. This makes Sb an interesting alternative to As for ultrashallow junctions in strain-engineered complementary metal-oxide-semiconductor device

An effective electrical isolation scheme by iron implantation at different substrate temperatures

High-energy implantation of iron in n-type doped InP epilayers at different substrate temperatures: 77K, room temperature (RT), 100degreesC and 200degreesC was investigated to study the electrical isolation of n-type InP. Iron isolation implants were performed at 1MeV with a fluence of 5 x 10(14) /cm(2). This isolation scheme was chosen to place most of the iron atoms well inside the n-type doped layer. The sheet resistivity (R,), sheet carrier concentration (n(S)) and sheet mobility (p) were measured as a function of substrate temperature and post-implantation annealing temperature (100 - 800degreesC). Samples implanted at 77K, RT and 100degreesC show more or less the same trend of postimplant annealing characteristics. A maximum sheet resistivity of similar to1 x 10(7) Omega/rectangle was achieved for samples implanted at 77K, RT and 100degreesC after annealing at 400degreesC. A lower resistivity of similar to1 x 10(6) Omega/rectangle was obtained for a 200degreesC implant after annealing at 4000C. Lower damage accumulation due to enhanced dynamic annealing is observed for the highest implantation temperature. For 200degreesC substrate temperature, annealing above 4000C resulted in a gradual decrease in sheet resistivity to a value close to that of the starting material. But this is not the case for the lower substrate temperatures. The sheet resistivity was increased again for 77K, RT and 100()C implant after annealing at 600degreesC. We infer that for 77K, RT and 100degreesC implantation temperatures, the electrical isolation is due to a product of both damage related centers and defects related to the presence of Fe whereas for 200degreesC substrate temperature, we infer that only damage induced compensation removes the carriers. These results show the importance of iron implants as a device isolation scheme.</p

British research in accounting and finance (2001–2007): the 2008 research assessment exercise

No abstract available