Introducing Optics in the Kindergarten

Introducing Optics in the Kindergarteninfo:eu-repo/semantics/publishedVersio

Study of RFe12−xMox (R =Y, Ho) compounds by neutron powder diffraction, ac susceptibility and magnetization

Neutron powder diffraction, magnetization and ac susceptibility measurements were performed on compounds of the series RFe12−xMox (R D Y and Ho, x D 1, 2, 3). The influence of the Mo content on both structural and magnetic properties is discussed. Comparison with published data for different Mo concentrations is made. It is found that the effect of Mo substitution for Fe on structural and magnetic properties can be described by two regimes separated by a critical Mo content around x=2.Portuguese-French JNICT-CNRS collaboration

MVG Mechanism: Differential Privacy under Matrix-Valued Query

Differential privacy mechanism design has traditionally been tailored for a scalar-valued query function. Although many mechanisms such as the Laplace and Gaussian mechanisms can be extended to a matrix-valued query function by adding i.i.d. noise to each element of the matrix, this method is often suboptimal as it forfeits an opportunity to exploit the structural characteristics typically associated with matrix analysis. To address this challenge, we propose a novel differential privacy mechanism called the Matrix-Variate Gaussian (MVG) mechanism, which adds a matrix-valued noise drawn from a matrix-variate Gaussian distribution, and we rigorously prove that the MVG mechanism preserves $(\epsilon,\delta)$-differential privacy. Furthermore, we introduce the concept of directional noise made possible by the design of the MVG mechanism. Directional noise allows the impact of the noise on the utility of the matrix-valued query function to be moderated. Finally, we experimentally demonstrate the performance of our mechanism using three matrix-valued queries on three privacy-sensitive datasets. We find that the MVG mechanism notably outperforms four previous state-of-the-art approaches, and provides comparable utility to the non-private baseline.Comment: Appeared in CCS'1

ZnO thin films implanted with Al, Sb and P : optical, structural and electrical characterization

In this work we report a study on the structure, optical and electrical properties of P, Sb and Al implanted ZnO thin films that had been produced by r.f. magnetron sputtering. The influence of the different replacing atoms on the structure and properties of the films has been explored. Looking for the best annealing conditions, two different annealing temperatures (300ºC and 500ºC) have been employed. Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), X-ray diffraction, transmittance and d.c conductivity measurements have been used to characterize the samples. X-ray diffraction and Raman scattering patterns confirm that after annealing, doped films keep a polycrystalline nature with (002) preferred orientation. These films remain very transparent and the electrical conductivity increases significantly after the 500ºC annealing, reaching values of 10.9 (cm)-1 in the P-doped, 10.33 (cm)-1 in the Al-doped and 0.56 (cm)-1 in the Sb-doped sample

Muoniated radical states in the organic semiconductor phthalocyanine

Phthalocyanine samples of ZnPc, H2Pc and CuPc were investigated by the muon spin rotation amp; 956;SR technique. In ZnPc and H2Pc, three muoniated radical states of paramagnetic origin were identified, two of which having hyperfine interactions in the range 110 150 MHz and correspondign to muonium addition at the outer benzene rings. The third state presents a smaller hyperfine interaction about 25 MHz , and is tentatively assigned to addition at bridging nitrogen atoms. CuPc has an unpaired electron from the Cu atom, which originates a diamagnetic like signal upon muonium addition. The signal exhibits two components with very different relaxation rates, corresponding to two different spatial couplings of the Cu electron with the muonium s electro

Muon diffusion and trapping in chalcopyrite semiconductors

The diffusion parameters of diamagnetic muons in chalcopyrites CuInSe2, CuInS2, CuInTe2, CuGaTe2 and (Ag0.25Cu0.75)InSe2 were obtained by [mu]SR methods. The variations among the different compositions were found to validate the anion-antibonding localization model. The application of a two-state model to the zero-field data revealed muon trapping by defects. The dipolar width at the trap and the number of jumps before trapping were determined. The Cu vacancy is identified as the trapping center in CuInSe2 and the energy depth of the trap has been determined.http://www.sciencedirect.com/science/article/B6TVH-47K37XD-1/1/c6039f1a6212b2c9af977ddf9c54886

Electrical and raman scattering studies of ZnO:P and ZnO:Sb thin films

A study on the structure, electrical and optical properties of ZnO thin films produced by r.f. magnetron sputtering and implanted either with phosphorous (P) or antimony (Sb) is reported in this work. Raman spectroscopy, X-ray diffraction, optical transmittance and Hall effect measurements have been employed to characterize the samples. X-ray diffraction and Raman scattering patterns confirm that, after a 500ºC annealing, the doped films keep a polycrystalline nature with (002) preferred orientation. These films are very transparent and Hall effect results show that all have p-type conduction, despite doping ion and dose. The electric resistivity reaches values of 0.012 (cm) and 0.042 (cm) for the P and Sb-doped samples, respectivel

Resonant raman scattering in ZnO : Mn and ZnO: Mn : Al thin films grown by RF sputtering

Raman spectroscopy results obtained under visible (non-resonant) and UV (resonant) excitation for nanocrystalline ZnO, ZnO:Mn and ZnO:Mn:Al thin films grown by radio frequency magnetron sputtering are presented and compared. The origin of the multiple longitudinal optical (LO) phonon Raman peaks, strongly enhanced under resonance conditions, and the effects of the dopants on them are discussed in the framework of the ‘cascade’ model. It is suggested that the observed suppression of the higher-order LO phonon lines for ZnO:Mn:Al is caused by the dissociation of excitons in the heavily n-type doped material. On the basis of the cascade model interpretation of the higher-order Raman peaks in the resonant spectra, the LO phonon frequencies for wavevectors away from the gamma point are evaluated and compared topreviously published phonon dispersion curves.Financial support from the FCT through project PTDC/FIS/72843/2006 is acknowledged

Raman study of doped-ZnO thin films grown by rf sputtering

A Raman spectroscopy study of doped versus undoped ZnO layers is presented. The layers were grown by RF magnetron sputtering and the doping with Al, Sb and Mn was achieved by ion implantation with subsequent annealing. First-order Raman response measured under λ=488 nm excitation is discussed. It is shown that doping with any of the impurities used in this work produces a strong enhancement of the longitudinal optical (LO) phonon band, which is attributed to the intra-band Fröhlich mechanism. In addition, doping with Mn results in an extra mode located at 530 cm-1, tentatively attributed to a local vibrational mode of Mn substituting Zn in the lattice sites.FCT through project PTDC/FIS/72843/200

The annealing effect on structural and optical properties of ZnO thin films produced by RF sputtering

In this work, a study of the structure and optical properties of undoped ZnO thin films produced by r.f. magnetron sputtering technique as a function of the growth parameters is reported. Modification under annealing conditions is also analysed. Raman spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and optical transmittance have been used. From the position of the (002) X-ray diffraction peak and the E2 (high) mode detected in Raman spectra, the residual stress both in the as-grown and in the annealed samples has been estimated