2 research outputs found
Doping-Based Stabilization of the M2 Phase in Free-Standing VO<sub>2</sub> Nanostructures at Room Temperature
A new high-yield method of doping VO<sub>2</sub> nanostructures
with aluminum is proposed, which renders possible stabilization of
the monoclinic M2 phase in free-standing nanoplatelets in ambient
conditions and opens an opportunity for realization of a purely electronic
Mott transition field-effect transistor without an accompanying structural
transition. The synthesized free-standing M2-phase nanostructures
are shown to have very high crystallinity and an extremely sharp temperature-driven
metal–insulator transition. A combination of X-ray microdiffraction,
micro-Raman spectroscopy, energy-dispersive X-ray spectroscopy, and
four-probe electrical measurements allowed thorough characterization
of the doped nanostructures. Light is shed onto some aspects of the
nanostructure growth, and the temperature-doping level phase diagram
is established