Istraživanje reaktivno nanešenih NbN slojeva

We have investigated the structural properties of thin films of reactively magnetron sputtered niobium nitride (NbN) under high-temperature annealing (with annealing temperatures ranging 850 to 950 ° C) and with different nitrogen contents in the working gas mixture. Prepared NbN films were characterized by Auger electron spectroscopy (AES) and X-ray diffraction (XRD). The influence of rapid thermal annealing (RTA) on a change of the structure properties and surface morphology was investigated. The correlation between technological parameters and film properties, structure and composition were established.Istraživana su strukturna svojstva tankih slojeva niobium nitrida (NbN) reaktivnorasprašenih magnetronom, uz visoko-temperaturno otpuštanje (na 850 do 950 ◦C), s različitim sadržajima dušika u radnom plinu. Dobiveni NbN tanki slojevi istraženi su Augerovom elektronskom spektroskopijom (AES) i rendgenskom difrakcijom (XRD). Proučavan je utjecaj brzog toplinskog otpuštanja na strukturna svojstva i površinu slojeva

PROPERTIES OF SPUTTERED NiO THIN FILMS

Nickel oxide (NiO) thin films were deposited on unheated Si substrates by reactive d.c. magnetron sputtering. A pure metallic nickel target was sputtered in a mixture of argon and oxygen. The oxygen content in the gas mixture was changed in the range from 20 to 44 % . After deposition the prepared NiO films were annealed at 500 • C for 8 hours in dry air. The films were characterized by X-ray diffraction (XRD), Auger electron spectroscopy (AES), and atomic force microscopy (AFM). Only as-deposited films in the metal-sputtering mode are crystalline. Annealing in dry air gives rise to crystalline phases in all samples. All examined NiO films were semiconductors and their conductance increased by four orders of magnitude between 25 and 350 • C