Investigating laser induced phase engineering in MoS2 transistors

Phase engineering of MoS2 transistors has recently been demonstrated and has led to record low contact resistances. The phase patterning of MoS2 flakes with laser radiation has also been realized via spectroscopic methods, which invites the potential of controlling the metallic and semiconducting phases of MoS2 transistors by simple light exposure. Nevertheless, the fabrication and demonstration of laser patterned MoS2 devices starting from the metallic polymorph has not been demonstrated yet. Here, we study the effects of laser radiation on 1T/1T'-MoS2 transistors with the prospect of driving an in-situ phase transition to the 2H-polymorph through light exposure. We find that although the Raman peaks of 2H-MoS2 become more prominent and the ones from the 1T/1T' phase fade after the laser exposure, the semiconducting properties of the laser patterned devices are not fully restored and the laser treatment ultimately leads to degradation of the transport channel

Thickness dependent interlayer transport in vertical MoS2 Josephson junctions

We report on observations of thickness dependent Josephson coupling and multiple Andreev reflections (MAR) in vertically stacked molybdenum disulfide (MoS2) - molybdenum rhenium (MoRe) Josephson junctions. MoRe, a chemically inert superconductor, allows for oxide free fabrication of high transparency vertical MoS2 devices. Single and bilayer MoS2 junctions display relatively large critical currents (up to 2.5 uA) and the appearance of sub-gap structure given by MAR. In three and four layer thick devices we observe orders of magnitude lower critical currents (sub-nA) and reduced quasiparticle gaps due to proximitized MoS2 layers in contact with MoRe. We anticipate that this device architecture could be easily extended to other 2D materials.Comment: 18 pages, 6 figures including Supporting Informatio

On-Chip Sub-Diffraction THz Spectroscopy of Materials and Liquids

This chapter summarizes the trends in terahertz measurements on the surface of rigid and flexible substrates. It focuses on research incorporating fast photoconductive switches to generate and detect on-chip THz pulses using a femtosecond laser. The chapter aims to review progress toward the study of picosecond dynamics and THz spectroscopy of materials and liquids. We emphasize general sub-diffraction techniques for THz spectroscopy, transmission line and waveguide design considerations, time-domain measurements for studies of material dynamics, and provide a survey of recent research on the THz spectroscopy of materials and liquids on-chip. We conclude with an outlook on the field and highlight promising new directions. This chapter is meant to be an introduction and a general guide to this emerging field for new researchers interested in on-chip THz studies