A comparative study of structural and electrical properties in lead-free BCZT ceramics: Influence of the synthesis method

In the present work, various grain size phenomena were studied in promising lead-free piezoelectric ceramics (Ba0.85Ca0.15) (Zr0.10Ti0.90)O3 fabricated via chemical and conventional oxide methods. Phase composition was ascertained by the Rietveld refinement. Average grain size estimated from the microstructure was ∼1.5 μm in the sol-gel derived ceramic (SG-BCZT) which was much smaller than that obtained in coarse grained (∼27 μm) sample prepared by solid state method (SS-BCZT). Systematic investigation of various functional properties viz. dielectric, ferroelectric, piezoelectric and impedance emphasized the profound influence of grain size effects. The increase in grain boundary volume fraction enhanced diffuseness while lowered the dielectric peak in SG-BCZT. Similarly, increase in elastic stiffness and progressive hindrance to domain wall movements, resulted in a decrease of the remnant polarization and the associated piezoelectric charge coefficient values in small-grained SG-BCZT sample. Accordingly, higher Young's modulus value of 158.3 GPa was observed in SG-BCZT as compared to 117.9 GPa in SS-BCZT. Local-area piezoresponse force microscopy (PFM) images revealed lamellar domains with periodicity 250 ± 90 nm in SS-BCZT while small sized fractal-like irregular domains with an estimated domain width of 150 ± 60 nm were registered in SG-BCZT. Complex impedance spectroscopy results along with grain boundary conductivity were also guided by grain size effect. The mechanisms of grain size driven effects and their impact on the functional properties were discussed.publishe

Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS2 Growth to Facilitate Mass Scale Device Production

Growth of monolayer WS2 of domain size beyond few microns is a challenge even today; and it is still restricted to traditional exfoliation techniques, with no control over the dimension. Here, we present the synthesis of mono- to few layer WS2 film of centimeter2 size on graphene-oxide (GO) coated Si/SiO2 substrate using the chemical vapor deposition CVD technique. Although the individual size of WS2 crystallites is found smaller, the joining of grain boundaries due to sp2-bonded carbon nanostructures (~3–6 nm) in GO to reduced graphene-oxide (RGO) transformed film, facilitates the expansion of domain size in continuous fashion resulting in full coverage of the substrate. Another factor, equally important for expanding the domain boundary, is surface roughness of RGO film. This is confirmed by conducting WS2 growth on Si wafer marked with few scratches on polished surface. Interestingly, WS2 growth was observed in and around the rough surface irrespective of whether polished or unpolished. More the roughness is, better the yield in crystalline WS2 flakes. Raman mapping ascertains the uniform mono-to-few layer growth over the entire substrate, and it is reaffirmed by photoluminescence, AFM and HRTEM. This study may open up a new approach for growth of large area WS2 film for device application. We have also demonstrated the potential of the developed film for photodetector application, where the cycling response of the detector is highly repetitive with negligible drift

Interface Kinetics Assisted Barrier Removal in Large Area 2D-WS₂ Growth to Facilitate Mass Scale Device Production

Growth of monolayer WS2 of domain size beyond few microns is a challenge even today; and it is still restricted to traditional exfoliation techniques, with no control over the dimension. Here, we present the synthesis of mono- to few layer WS2 film of centimeter2 size on graphene-oxide (GO) coated Si/SiO2 substrate using the chemical vapor deposition CVD technique. Although the individual size of WS2 crystallites is found smaller, the joining of grain boundaries due to sp2-bonded carbon nanostructures (~3–6 nm) in GO to reduced graphene-oxide (RGO) transformed film, facilitates the expansion of domain size in continuous fashion resulting in full coverage of the substrate. Another factor, equally important for expanding the domain boundary, is surface roughness of RGO film. This is confirmed by conducting WS2 growth on Si wafer marked with few scratches on polished surface. Interestingly, WS2 growth was observed in and around the rough surface irrespective of whether polished or unpolished. More the roughness is, better the yield in crystalline WS2 flakes. Raman mapping ascertains the uniform mono-to-few layer growth over the entire substrate, and it is reaffirmed by photoluminescence, AFM and HRTEM. This study may open up a new approach for growth of large area WS2 film for device application. We have also demonstrated the potential of the developed film for photodetector application, where the cycling response of the detector is highly repetitive with negligible drift

Aligned nanogold assisted one step sensing and removal of heavy metal ions

We depict a novel strategy exploiting the chemistry of metal ion adsorption for detection and sequestration of toxic heavy metal from processed water using gold nanoparticles capped with 4-aminothiophenol. The interaction between 4-aminothiophenol capped gold nanoparticles and heavy metal ions was studied as a function of time and concentration using TEM, HRTEM, SEM, EDS, and I–V characterization. Experiments confirmed that pH is one of the crucial controlling parameters. Adsorption capacity was monitored using AAS, UV–vis spectroscopy and I–V measurement. In the absence of any alloy formation between Au and heavy metal ions, the desorption of the heavy metal ions from 4-aminothiophenol capped gold nanoparticles surface by pH modulation serves as a mean of collection of heavy metal ions. Experiments revealed that the concentration of heavy metal ions in processed water after adsorption is below the maximum permissible limit set by the WHO