Clinically Mild Encephalopathy with a Reversible Splenial Lesion Accompanying Mumps Virus Infection：a 5-Year-Old Girl Report

Aseptic meningitis is known as a mumps complication. However, there are few cases of clinically mild encephalopathy with a reversible splenial lesion（MERS） associated with mumps infection. We report a MERS related to mumps infection in a girl. In the early clinical course, repeating convulsion and consciousness disturbance with hallucination were recognized. Initially, we suspected aseptic meningitis due to mumps, because of her swollen right parotid gland. Cerebrospinal fluid test was performed, but the result was normal. After that, diffusion weighted image of magnetic resonance imaging was added and abnormal signal intensity was recognized in the corpus callosum, so she was diagnosed as MERS. Treatment was performed with steroid pulse therapy and patients was discharged without neurologic sequelae. We need to pay attention to MERS as complication although rare in a mumps infection

FRET-mediated near infrared whispering gallery modes: studies on the relevance of intracavity energy transfer with Q-factor

Near infrared (NIR) optical microsphere resonators are prepared by coassembly of energy-donating and accepting conjugated polymers. In the microspheres, fluorescence resonance energy transfer occurs, leading to sharp and periodic photoluminescence from whispering gallery modes in the NIR region with Q-factors as high as 600

Electrical Properties of Carbon-Nanotube-Network Transistors during Proton-Micro-Beam Irradiation

Carbon-Nanotube-network transistor exhibits a large radiation tolerance, and has potentials to be applied to radiation-resistance devices. In our previous work, we have reported that the CNT-network transistors are applicable in use in very high dose gamma-ray field with the total dose up to 30 kGy.[1] In this work, we extended our studies to investigate the electrical properties of CNT-network transistors against protons. For irradaition, SPICE-NIRS microbeam [2] was used to target CNT-network transistor (100 x 20 µm2) with a beam size of 200 µm2 in diameter. Protons at the CNNT layer were calculated to be 3.34 MeV with the beam intensity (protons per second) controlled to be 5.0x104, or 5.0 x105 within ± 5 % deviation. Irradiation was conducted at the drain voltage of -1 V under positive and negative gate bias in air. The drain current of the device was increased gradually for positive gate bias during the irradiation, and then decreased gradually after the irradiation stopped. In contrast, the drain current was decreased gradually for negative gate bias during the irradiation, and then increased gradually after the irradiation was stopped. These changes caused by the irradiation suggested that the irradiated proton formed the negative charges near the CNT/gate insulator interfaces.[1] Ishii S et al., Physica Section E, in press [2] Konishi T et al., J Radiat Res, 54: 736-747 (2013)International Workshop on Superconductivity and Related Functional Materials 201