3 research outputs found
<i>Anti</i>-Perovskite Li-Battery Cathode Materials
Through single-step solid-state reactions,
a series of novel bichalcogenides
with the general composition (Li<sub>2</sub>Fe)<i>Ch</i>O (<i>Ch</i> = S, Se, Te) are successfully synthesized.
(Li<sub>2</sub>Fe)<i>Ch</i>O (<i>Ch</i> = S, Se)
possess cubic <i>anti</i>-perovskite crystal structures,
where Fe and Li are completely disordered on a common crystallographic
site (3<i>c</i>). According to Goldschmidt calculations,
Li<sup>+</sup> and Fe<sup>2+</sup> are too small for their common
atomic position and exhibit large thermal displacements in the crystal
structure models, implying high cation mobility. Both compounds (Li<sub>2</sub>Fe)<i>Ch</i>O (<i>Ch</i> = S, Se) were
tested as cathode materials against graphite anodes (single cells);
They perform outstandingly at very high charge rates (270 mA g<sup>–1</sup>, 80 cycles) and, at a charge rate of 30 mA g<sup>–1</sup>, exhibit charge capacities of about 120 mA h g<sup>–1</sup>. Compared to highly optimized Li<sub>1–<i>x</i></sub>CoO<sub>2</sub> cathode materials, these novel <i>anti</i>-perovskites are easily produced at cost reductions
by up to 95% and, yet, possess a relative specific charge capacity
of 75%. Moreover, these iron-based <i>anti</i>-perovskites
are comparatively friendly to the environment and (Li<sub>2</sub>Fe)<i>Ch</i>O (<i>Ch</i> = S, Se) melt congruently; the
latter is advantageous for manufacturing pure materials in large amounts
New Monoclinic Phase at the Composition Cu<sub>2</sub>SnSe<sub>3</sub> and Its Thermoelectric Properties
A new monoclinic phase (<i>m2</i>) of ternary diamond-like compound Cu<sub>2</sub>SnSe<sub>3</sub> was synthesized by reaction of the elements at 850 K. The crystal
structure of <i>m2</i>-Cu<sub>2</sub>SnSe<sub>3</sub> was
determined through electron diffraction tomography and refined by
full-profile techniques using synchrotron X-ray powder diffraction
data (space group <i>Cc</i>, <i>a</i> = 6.9714(2)
Å, <i>b</i> = 12.0787(5) Å, <i>c</i> = 13.3935(5) Å, β = 99.865(5)°, <i>Z</i> = 8). Thermal analysis and annealing experiments suggest that <i>m2</i>-Cu<sub>2</sub>SnSe<sub>3</sub> is a low-temperature phase,
while the high-temperature phase has a cubic crystal structure. According
to quantum chemical calculations, <i>m2</i>-Cu<sub>2</sub>SnSe<sub>3</sub> is a narrow-gap semiconductor. A study of the chemical
bonding, applying the electron localizability approach, reveals covalent
polar Cu–Se and Sn–Se interactions in the crystal structure.
Thermoelectric properties were measured on a specimen consolidated
using spark plasma sintering (SPS), confirming the semiconducting
character. The thermoelectric figure of merit <i>ZT</i> reaches
a maximum value of 0.33 at 650 K
Crystal Structure and Physical Properties of Ternary Phases around the Composition Cu<sub>5</sub>Sn<sub>2</sub>Se<sub>7</sub> with Tetrahedral Coordination of Atoms
A new monoclinic selenide Cu<sub>5</sub>Sn<sub>2</sub>Se<sub>7</sub> was synthesized, and its crystal
and electronic structure as well
as thermoelectric properties were studied. The crystal structure of
Cu<sub>5</sub>Sn<sub>2</sub>Se<sub>7</sub> was determined by electron
diffraction tomography and refined by full-profile techniques using
synchrotron X-ray powder diffraction data: space group <i>C</i>2, <i>a</i> = 12.6509(3) Ã…, <i>b</i> = 5.6642(2)
Å, <i>c</i> = 8.9319(4) Å, β = 98125(4)°, <i>Z</i> = 2; <i>T</i> = 295 K. Thermal analysis and
high-temperature synchrotron X-ray diffraction indicated the decomposition
of Cu<sub>5</sub>Sn<sub>2</sub>Se<sub>7</sub> at 800 K with formation
of the tetragonal high-temperature phase Cu<sub>4.90(4)</sub>Sn<sub>2.10(4)</sub>Se<sub>7</sub>: space group <i>I</i>4Ì…2<i>m</i>, <i>a</i> = 5.74738(1) Ã…, <i>c</i> = 11.45583(3) Ã…; <i>T</i> = 873 K. Both crystal structures
are superstructures to the sphalerite type with tetrahedral coordination
of the atoms. In agreement with chemical bonding analysis and band
structure calculations, Cu<sub>5</sub>Sn<sub>2</sub>Se<sub>7</sub> exhibits metal-like electronic transport behavior