High Temperature Electron Localization in dense He Gas

We report new accurate mesasurements of the mobility of excess electrons in high density Helium gas in extended ranges of temperature $[(26\leq T\leq 77) K ]$ and density $[ (0.05\leq N\leq 12.0) {atoms} \cdot {nm}^{-3}]$ to ascertain the effect of temperature on the formation and dynamics of localized electron states. The main result of the experiment is that the formation of localized states essentially depends on the relative balance of fluid dilation energy, repulsive electron-atom interaction energy, and thermal energy. As a consequence, the onset of localization depends on the medium disorder through gas temperature and density. It appears that the transition from delocalized to localized states shifts to larger densities as the temperature is increased. This behavior can be understood in terms of a simple model of electron self-trapping in a spherically symmetric square well.Comment: 23 pages, 13 figure

Electrical resistivity at large temperatures: Saturation and lack thereof

Many transition metal compounds show saturation of the resistivity at high temperatures, T, while the alkali-doped fullerenes and the high-Tc cuprates are usually considered to show no saturation. We present a model of transition metal compounds, showing saturation, and a model of alkali-doped fullerenes, showing no saturation. To analyze the results we use the f-sum rule, which leads to an approximate upper limit for the resistivity at large T. For some systems and at low T, the resistivity increases so rapidly that this upper limit is approached for experimental T. The resistivity then saturates. For a model of transition metal compounds with weakly interacting electrons, the upper limit corresponds to a mean free path consistent with the Ioffe-Regel condition. For a model of the high Tc cuprates with strongly interacting electrons, however, the upper limit is much larger than the Ioffe-Regel condition suggests. Since this limit is not exceeded by experimental data, the data are consistent with saturation also for the cuprates. After "saturation" the resistivity usually grows slowly. For the alkali-doped fullerenes, "saturation" can be considered to have happened already for T=0, due to orientational disorder. For these systems, however, the resistivity grows so rapidly after "saturation" that this concept is meaningless. This is due to the small band width and to the coupling to the level energies of the important phonons.Comment: 22 pages, RevTeX, 19 eps figures, additional material available at http://www.mpi-stuttgart.mpg.de/andersen/fullerene

Resistivity of a Metal between the Boltzmann Transport Regime and the Anderson Transition

We study the transport properties of a finite three dimensional disordered conductor, for both weak and strong scattering on impurities, employing the real-space Green function technique and related Landauer-type formula. The dirty metal is described by a nearest neighbor tight-binding Hamiltonian with a single s-orbital per site and random on-site potential (Anderson model). We compute exactly the zero-temperature conductance of a finite size sample placed between two semi-infinite disorder-free leads. The resistivity is found from the coefficient of linear scaling of the disorder averaged resistance with sample length. This ``quantum'' resistivity is compared to the semiclassical Boltzmann expression computed in both Born approximation and multiple scattering approximation.Comment: 5 pages, 3 embedded EPS figure

A limit model for thermoelectric equations

We analyze the asymptotic behavior corresponding to the arbitrary high conductivity of the heat in the thermoelectric devices. This work deals with a steady-state multidimensional thermistor problem, considering the Joule effect and both spatial and temperature dependent transport coefficients under some real boundary conditions in accordance with the Seebeck-Peltier-Thomson cross-effects. Our first purpose is that the existence of a weak solution holds true under minimal assumptions on the data, as in particular nonsmooth domains. Two existence results are studied under different assumptions on the electrical conductivity. Their proofs are based on a fixed point argument, compactness methods, and existence and regularity theory for elliptic scalar equations. The second purpose is to show the existence of a limit model illustrating the asymptotic situation.Comment: 20 page

Superconducting proximity effect in clean ferromagnetic layers

We investigate superconducting proximity effect in clean ferromagnetic layers with rough boundaries. The subgap density of states is formed by Andreev bound states at energies which depend on trajectory length and the ferromagnetic exchange field. At energies above the gap, the spectrum is governed by resonant scattering states. The resulting density of states, measurable by tunneling spectroscopy, exhibits a rich structure, which allows to connect the theoretical parameters from experiments.Comment: 11 pages, 5 figures (included

Strong coupling of excited heavy mesons

We compute the strong coupling constant $G_{B^{**} B \pi} \; (G_{D^{**} D \pi})$, where $B^{**}$ ($D^{**}$) is the $0^+$ $P-$wave $b \bar q \; (c \bar q)$ state, by QCD sum rules and by light-cone sum rules. The two methods give compatible results in the limit $m_Q \to \infty$, with a rather large value of the coupling constant. We apply the results to the calculation of the hadronic widths of the positive parity $B$ and $D$ states and to the chiral loop contribution to the ratio $f_{D_s}/f_D$.Comment: 31 pages, RevTeX, 4 figures appended as uuencoded fil

A Green's function approach to transmission of massless Dirac fermions in graphene through an array of random scatterers

We consider the transmission of massless Dirac fermions through an array of short range scatterers which are modeled as randomly positioned $\delta$- function like potentials along the x-axis. We particularly discuss the interplay between disorder-induced localization that is the hallmark of a non-relativistic system and two important properties of such massless Dirac fermions, namely, complete transmission at normal incidence and periodic dependence of transmission coefficient on the strength of the barrier that leads to a periodic resonant transmission. This leads to two different types of conductance behavior as a function of the system size at the resonant and the off-resonance strengths of the delta function potential. We explain this behavior of the conductance in terms of the transmission through a pair of such barriers using a Green's function based approach. The method helps to understand such disordered transport in terms of well known optical phenomena such as Fabry Perot resonances.Comment: 22 double spaced single column pages. 15 .eps figure

Sum rules and energy scales in the high-temperature superconductor YBa2Cu3O6+x

The Ferrell-Glover-Tinkham (FGT) sum rule has been applied to the temperature dependence of the in-plane optical conductivity of optimally-doped YBa_2Cu_3O_{6.95} and underdoped YBa_2Cu_3O_{6.60}. Within the accuracy of the experiment, the sum rule is obeyed in both materials. However, the energy scale \omega_c required to recover the full strength of the superfluid \rho_s in the two materials is dramatically different; \omega_c \simeq 800 cm^{-1} in the optimally doped system (close to twice the maximum of the superconducting gap, 2\Delta_0), but \omega_c \gtrsim 5000 cm^{-1} in the underdoped system. In both materials, the normal-state scattering rate close to the critical temperature is small, \Gamma < 2\Delta_0, so that the materials are not in the dirty limit and the relevant energy scale for \rho_s in a BCS material should be twice the energy gap. The FGT sum rule in the optimally-doped material suggests that the majority of the spectral weight of the condensate comes from energies below 2\Delta_0, which is consistent with a BCS material in which the condensate originates from a Fermi liquid normal state. In the underdoped material the larger energy scale may be a result of the non-Fermi liquid nature of the normal state. The dramatically different energy scales suggest that the nature of the normal state creates specific conditions for observing the different aspects of what is presumably a central mechanism for superconductivity in these materials.Comment: RevTeX 4 file, 9 pages with 7 embedded eps figure

Disorder-to-order transition in the magnetic and electronic properties of URh_2Ge_2

We present a study of annealing effects on the physical properties of tetragonal single--crystalline URh_2Ge_2. This system, which in as-grown form was recently established as the first metallic 3D random-bond heavy-fermion spin glass, is transformed by an annealing treatment into a long-range antiferromagnetically (AFM) ordered heavy-fermion compound. The transport properties, which in the as-grown material were dominated by the structural disorder, exhibit in the annealed material signs of typical metallic behavior along the crystallographic a axis. From our study URh_2Ge_2 emerges as exemplary material highlighting the role and relevance of structural disorder for the properties of strongly correlated electron systems. We discuss the link between the magnetic and electronic behavior and how they are affected by the structural disorder.Comment: Phys. Rev. B, in print (scheduled 1 Mar 2000