2 research outputs found
Indirect Band Gap Emission by Hot Electron Injection in Metal/MoS<sub>2</sub> and Metal/WSe<sub>2</sub> Heterojunctions
Transition metal dichalcogenides
(TMDCs), such as MoS<sub>2</sub> and WSe<sub>2</sub>, are free of
dangling bonds and therefore make more “ideal” Schottky
junctions than bulk semiconductors, which produce Fermi energy pinning
and recombination centers at the interface with bulk metals, inhibiting
charge transfer. Here, we observe a more than 10× enhancement
in the indirect band gap photoluminescence of transition metal dichalcogenides
(TMDCs) deposited on various metals (e.g., Cu, Au, Ag), while the
direct band gap emission remains unchanged. We believe the main mechanism
of light emission arises from photoexcited hot electrons in the metal
that are injected into the conduction band of MoS<sub>2</sub> and
WSe<sub>2</sub> and subsequently recombine radiatively with minority
holes in the TMDC. Since the conduction band at the K-point is 0.5
eV higher than at the Σ-point, a lower Schottky barrier exists
for the Σ-point band, making electron injection more favorable.
Also, the Σ band consists of the sulfur <i>p</i><sub><i>z</i></sub> orbital, which overlaps more significantly
with the electron wave functions in the metal. This enhancement in
the indirect emission only occurs for thick flakes of MoS<sub>2</sub> and WSe<sub>2</sub> (≥100 nm) and is completely absent in
monolayer and few-layer (∼10 nm) flakes. Here, the flake thickness
must exceed the depletion width of the Schottky junction, in order
for efficient radiative recombination to occur in the TMDC. The intensity
of this indirect peak decreases at low temperatures, which is consistent
with the hot electron injection model
Layer Control of WSe<sub>2</sub> <i>via</i> Selective Surface Layer Oxidation
We
report Raman and photoluminescence spectra of mono- and few-layer
WSe<sub>2</sub> and MoSe<sub>2</sub> taken before and after exposure
to a remote oxygen plasma. For bilayer and trilayer WSe<sub>2</sub>, we observe an increase in the photoluminescence intensity and a
blue shift of the photoluminescence peak positions after oxygen plasma
treatment. The photoluminescence spectra of trilayer WSe<sub>2</sub> exhibit features of a bilayer after oxygen plasma treatment. Bilayer
WSe<sub>2</sub> exhibits features of a monolayer, and the photoluminescence
of monolayer WSe<sub>2</sub> is completely absent after the oxygen
plasma treatment. These changes are observed consistently in more
than 20 flakes. The mechanism of the changes observed in the photoluminescence
spectra of WSe<sub>2</sub> is due to the selective oxidation of the
topmost layer. As a result, <i>N</i>-layer WSe<sub>2</sub> is reduced to <i>N</i>–1 layers. Raman spectra
and AFM images taken from the WSe<sub>2</sub> flakes before and after
the oxygen treatment corroborate these findings. Because of the low
kinetic energy of the oxygen radicals in the remote oxygen plasma,
the oxidation is self-limiting. By varying the process duration from
1 to 10 min, we confirmed that the oxidation will only affect the
topmost layer of the WSe<sub>2</sub> flakes. X-ray photoelectron spectroscopy
shows that the surface layer WO<sub><i>x</i></sub> of the
sample can be removed by a quick dip in KOH solution. Therefore, this
technique provides a promising way of controlling the thickness of
WSe<sub>2</sub> layer by layer