71 research outputs found
Microwave Transport in Metallic Single-Walled Carbon Nanotubes
The dynamical conductance of electrically contacted single-walled carbon
nanotubes is measured from dc to 10 GHz as a function of source-drain voltage
in both the low-field and high-field limits. The ac conductance of the nanotube
itself is found to be equal to the dc conductance over the frequency range
studied for tubes in both the ballistic and diffusive limit. This clearly
demonstrates that nanotubes can carry high-frequency currents at least as well
as dc currents over a wide range of operating conditions. Although a detailed
theoretical explanation is still lacking, we present a phenomenological model
of the ac impedance of a carbon nanotube in the presence of scattering that is
consistent with these results.Comment: Added reference
High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice
InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2V-1s-1at ambient temperature, show an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm-1that dominates the polar-optical mode scattering from ∼70 K to 300 K. The measured optical phonon frequency is insensitive to the carrier density modulated with a surface gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity scattering starts to dominate for temperatures <100 K. In the high mobility In0.75Ga0.25As quantum well, GaAs-like phonons do not couple to the electron gas unlike the case of In0.53Ga0.47As quantum wells
High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure
Impact of black silicon on light‐ and elevated temperature‐induced degradation in industrial passivated emitter and rear cells
Development of Accelerated Method for Thermal Cycling in Electronic Packaging Application
Numerical Analysis of Fluid Flow and Heat Transfer of Flow Between Parallel Plates Having Rectangular Shape Micromixer
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