13 research outputs found

    Extraordinary Dynamic Mechanical Response of Vanadium Dioxide Nanowires around the Insulator to Metal Phase Transition

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    Nanomechanical resonators provide a compelling platform to investigate and exploit phase transitions coupled to mechanical degrees of freedom because resonator frequencies and quality factors are exquisitely sensitive to changes in state, particularly for discontinuous changes accompanying a first-order phase transition. Correlated scanning fiber-optic interferometry and dual-beam Raman spectroscopy were used to investigate mechanical fluctuations of vanadium dioxide (VO<sub>2</sub>) nanowires across the first order insulator to metal transition. Unusually large and controllable changes in resonator frequency were observed due to the influences of domain wall motion and anomalous phonon softening on the effective modulus. In addition, extraordinary static and dynamic displacements were generated by local strain gradients, suggesting new classes of sensors and nanoelectromechanical devices with programmable discrete outputs as a function of continuous inputs

    Optical Control of Mechanical Mode-Coupling within a MoS<sub>2</sub> Resonator in the Strong-Coupling Regime

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    Two-dimensional (2-D) materials including graphene and transition metal dichalcogenides (TMDs) are an exciting platform for ultrasensitive force and displacement detection in which the strong light–matter coupling is exploited in the optical control of nanomechanical motion. Here we report the optical excitation and displacement detection of a ∼ 3 nm thick MoS<sub>2</sub> resonator in the strong-coupling regime, which has not previously been achieved in 2-D materials. Mechanical mode frequencies can be tuned by more than 12% by optical heating, and they exhibit avoided crossings indicative of strong intermode coupling. When the membrane is optically excited at the frequency difference between vibrational modes, normal mode splitting is observed, and the intermode energy exchange rate exceeds the mode decay rate by a factor of 15. Finite element and analytical modeling quantifies the extent of mode softening necessary to control intermode energy exchange in the strong coupling regime

    DataSheet_1_Mycobacterial acyl carrier protein suppresses TFEB activation and upregulates miR-155 to inhibit host defense.pdf

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    Mycobacterial acyl carrier protein (AcpM; Rv2244), a key protein involved in Mycobacterium tuberculosis (Mtb) mycolic acid production, has been shown to suppress host cell death during mycobacterial infection. This study reports that mycobacterial AcpM works as an effector to subvert host defense and promote bacterial growth by increasing microRNA (miRNA)-155-5p expression. In murine bone marrow-derived macrophages (BMDMs), AcpM protein prevented transcription factor EB (TFEB) from translocating to the nucleus in BMDMs, which likely inhibited transcriptional activation of several autophagy and lysosomal genes. Although AcpM did not suppress autophagic flux in BMDMs, AcpM reduced Mtb and LAMP1 co-localization indicating that AcpM inhibits phagolysosomal fusion during Mtb infection. Mechanistically, AcpM boosted the Akt-mTOR pathway in BMDMs by upregulating miRNA-155-5p, a SHIP1-targeting miRNA. When miRNA-155-5p expression was inhibited in BMDMs, AcpM-induced increased intracellular survival of Mtb was suppressed. In addition, AcpM overexpression significantly reduced mycobacterial clearance in C3HeB/FeJ mice infected with recombinant M. smegmatis strains. Collectively, our findings point to AcpM as a novel mycobacterial effector to regulate antimicrobial host defense and a potential new therapeutic target for Mtb infection.</p

    Oxidation State Discrimination in the Atomic Layer Deposition of Vanadium Oxides

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    We describe the use of a vanadium 3+ precursor for atomic layer deposition (ALD) of thin films that span the common oxidation states of vanadium oxides. Self-limiting surface synthesis of V<sub>2</sub>O<sub>3</sub>, VO<sub>2</sub>, and V<sub>2</sub>O<sub>5</sub> are realized through four distinct reaction mechanisms accessed via judicious choice of oxygen ALD partners. <i>In situ</i> quartz crystal microbalance and quadrupole mass spectrometry were used to study the reaction mechanism of the vanadium precursor with O<sub>3</sub>, H<sub>2</sub>O<sub>2</sub>, H<sub>2</sub>O/O<sub>2</sub>, and H<sub>2</sub>O<sub>2</sub>/H<sub>2</sub>. A clear distinction between nonoxidative protic ligand exchange and metal oxidation is demonstrated through sequential surface reactions with different nonmetal precursors. This synergistic effect provides greater control of the resultant metal species in the film, as well as reactive surface species during growth. In an extension of this approach, we introduce oxidation state control through reducing equivalents of H<sub>2</sub> gas. When H<sub>2</sub> is dosed after H<sub>2</sub>O<sub>2</sub> during growth, amorphous films of VO<sub>2</sub> are deposited that are readily crystallized with a low temperature anneal. These VO<sub>2</sub> films show a temperature dependent Raman spectroscopy response in the expected range and consistent with the well-known phase-change behavior of VO<sub>2</sub>

    Amorphous TiO<sub>2</sub> Compact Layers via ALD for Planar Halide Perovskite Photovoltaics

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    A low-temperature (<120 °C) route to pinhole-free amorphous TiO<sub>2</sub> compact layers may pave the way to more efficient, flexible, and stable inverted perovskite halide device designs. Toward this end, we utilize low-temperature thermal atomic layer deposition (ALD) to synthesize ultrathin (12 nm) compact TiO<sub>2</sub> underlayers for planar halide perovskite PV. Although device performance with as-deposited TiO<sub>2</sub> films is poor, we identify room-temperature UV–O<sub>3</sub> treatment as a route to device efficiency comparable to crystalline TiO<sub>2</sub> thin films synthesized by higher temperature methods. We further explore the chemical, physical, and interfacial properties that might explain the improved performance through X-ray diffraction, spectroscopic ellipsometry, Raman spectroscopy, and X-ray photoelectron spectroscopy. These findings challenge our intuition about effective electron selective layers as well as point the way to a greater selection of flexible substrates and more stable inverted device designs

    Liquid Water- and Heat-Resistant Hybrid Perovskite Photovoltaics via an Inverted ALD Oxide Electron Extraction Layer Design

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    Despite rapid advances in conversion efficiency (>22%), the environmental stability of perovskite solar cells remains a substantial barrier to commercialization. Here, we show a significant improvement in the stability of inverted perovskite solar cells against liquid water and high operating temperature (100 °C) by integrating an ultrathin amorphous oxide electron extraction layer via atomic layer deposition (ALD). These unencapsulated inverted devices exhibit a stable operation over at least 10 h when subjected to high thermal stress (100 °C) in ambient environments, as well as upon direct contact with a droplet of water without further encapsulation

    Liquid Water- and Heat-Resistant Hybrid Perovskite Photovoltaics via an Inverted ALD Oxide Electron Extraction Layer Design

    No full text
    Despite rapid advances in conversion efficiency (>22%), the environmental stability of perovskite solar cells remains a substantial barrier to commercialization. Here, we show a significant improvement in the stability of inverted perovskite solar cells against liquid water and high operating temperature (100 °C) by integrating an ultrathin amorphous oxide electron extraction layer via atomic layer deposition (ALD). These unencapsulated inverted devices exhibit a stable operation over at least 10 h when subjected to high thermal stress (100 °C) in ambient environments, as well as upon direct contact with a droplet of water without further encapsulation

    Targeted Single-Site MOF Node Modification: Trivalent Metal Loading via Atomic Layer Deposition

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    Postsynthetic functionalization of metal organic frameworks (MOFs) enables the controlled, high-density incorporation of new atoms on a crystallographically precise framework. Leveraging the broad palette of known atomic layer deposition (ALD) chemistries, <u>A</u>LD <u>i</u>n <u>M</u>OFs (AIM) is one such targeted approach to construct diverse, highly functional, few-atom clusters. We here demonstrate the saturating reaction of trimethylindium (InMe<sub>3</sub>) with the node hydroxyls and ligated water of NU-1000, which takes place without significant loss of MOF crystallinity or internal surface area. We computationally identify the elementary steps by which trimethylated trivalent metal compounds (ALD precursors) react with this Zr-based MOF node to generate a uniform and well characterized new surface layer on the node itself, and we predict a final structure that is fully consistent with experimental X-ray pair distribution function (PDF) analysis. We further demonstrate tunable metal loading through controlled number density of the reactive handles (−OH and −OH<sub>2</sub>) achieved through node dehydration at elevated temperatures

    Regioselective Atomic Layer Deposition in Metal–Organic Frameworks Directed by Dispersion Interactions

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    The application of atomic layer deposition (ALD) to metal–organic frameworks (MOFs) offers a promising new approach to synthesize designer functional materials with atomic precision. While ALD on flat substrates is well established, the complexity of the pore architecture and surface chemistry in MOFs present new challenges. Through <i>in situ</i> synchrotron X-ray powder diffraction, we visualize how the deposited atoms are localized and redistribute within the MOF during ALD. We demonstrate that the ALD is regioselective, with preferential deposition of oxy-Zn­(II) species within the small pores of NU-1000. Complementary density functional calculations indicate that this startling regioselectivity is driven by dispersion interactions associated with the preferential adsorption sites for the organometallic precursors prior to reaction

    Regioselective Atomic Layer Deposition in Metal–Organic Frameworks Directed by Dispersion Interactions

    No full text
    The application of atomic layer deposition (ALD) to metal–organic frameworks (MOFs) offers a promising new approach to synthesize designer functional materials with atomic precision. While ALD on flat substrates is well established, the complexity of the pore architecture and surface chemistry in MOFs present new challenges. Through <i>in situ</i> synchrotron X-ray powder diffraction, we visualize how the deposited atoms are localized and redistribute within the MOF during ALD. We demonstrate that the ALD is regioselective, with preferential deposition of oxy-Zn­(II) species within the small pores of NU-1000. Complementary density functional calculations indicate that this startling regioselectivity is driven by dispersion interactions associated with the preferential adsorption sites for the organometallic precursors prior to reaction
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