Ovarian cancer molecular pathology.

Peer reviewe

DEVELOPMENT OF CHEAP AND DURABLE SILICON SOLAR CELLS WITH NANOSCALE P-N JUNCTIONS

The possibility of developing efficient, cheap, sustainable and long-lasting solar cells has been studied. Parameters of the heterojunction material are determined

THE RANGE OF EFFECTIVE LIGHT ABSORPTION AND ELECTROPHYSIC PROPERTIES OF A SOLAR ELEMENT NANOSCALE p-n JUNCTIONS»

The creation of effective solar cells for long-term operation in open area with continuously changing thermal regime is an urgent scientific and technological task of our time. This task is considered in this paper. - the factors affecting the current-voltage characteristic of the nanoscale p-n junction are determined»; - calculated value of the photocurrent depending on the number of quanta in the light absorption spectrum (photocurrent in one nanoscale p-p junction is determined by the absorption of 41.81% of the incident solar radiation, that is, the absorption of almost half of the incident light intensity in the number of quanta), - the efficiency coefficient of the solar cell with nanoscale p-n junction is calculated»; - the interconnection of the electro physical properties of nanoscale p-n junction with the parameters of the current-voltage characteristics of the solar element are determined in the work. Production of solar energy devices requires the development of new approaches and innovative solutions to improve their efficiency. In order to reduce the cost of materials used in the creation of effective solar elements long-term operation in the open area, the expediency of using low-cost non-crystalline materials with a highly defective structure. For example, the possibility of using as a substrate material of solar elements of non-crystalline, disordered, highly defective and cheap silicon, capable of long-term operation in an open space with a continuously changing thermal regime. As the most appropriate material nanoinclusion this paper proposes the use of chalcogenides lead with a high value of electro capacitance (PbS, PbSe and PbTl), the permittivity of which fifteen to twenty times greater than a corresponding amount of silicon. The main attention is paid to the calculation of the electro physical properties of the nanoscale p-n junction . Calculation of the electro physical properties of nanoscale p-n junctions and their current-voltage characteristics have been considered in the paper. In particular, we discovered electro physical properties , nanoscale p-n junction on the basis of the solution of the Poisson equation and the Ostragradsky-Gauss theorem. Expressions for the potential and strength of the electrostatic field are obtained, the amount of concentrated charge on one nanoinclusion is determined, as well as the drift velocity of the electron in the electrostatic field of the nanoscale p-n junction