Oxygen-layer structure improves lithium-doped silicon solar cells

Technique fabricates hybrid structure utilizing low oxygen silicon as bulk cell material and shallow overlay of silicon with high oxygen concentration

Research, development and pilot production of high output thin silicon solar cells

Work was performed to define and apply processes which could lead to high output from thin (2-8 mils) silicon solar cells. The overall problems are outlined, and two satisfactory process sequences were developed. These sequences led to good output cells in the thickness range to just below 4 mils; although the initial contract scope was reduced, one of these sequences proved capable of operating beyond a pilot line level, to yield good quality 4-6 mil cells of high output

Study of Lithium Doped Solar Cells Quarterly Report

Study of lithium doped solar cell

Study of lithium doped solar cells

Solar cell properties change from lithium dopin

Development and fabrication of lithium-doped solar cells

The application of contacts and coatings after lithium diffusion provides good electrical output and satisfactory contact adhesion by sintering for short times at temperatures less than the lithium diffusion temperature. High output and repeatability are obtainable from both oxygen-rich and oxygen-lean silicon. These fabrication sequence alterations have led to higher cell output, better appearance, and increased contact strength

Metallization problems with concentrator cells

Cells used with concentrators have similar contact requirements to other cells, but operation at high intensity imposes more than the usual demands on the metallization. Overall contact requirements are listed and concentrator cell requirements are discussed

Some disconnected speculations on slicing silicon

The basic principles for qualifying silicon wafering methods are summarized, and unconventional methods of wafering was discussed. Methods of cleaving analogous to diamond cutting, geological processes employing the expansion of freezing water, and karate chops are touched upon

High efficiency solar cell processing

At the time of writing, cells made by several groups are approaching 19% efficiency. General aspects of the processing required for such cells are discussed. Most processing used for high efficiency cells is derived from space-cell or concentrator cell technology, and recent advances have been obtained from improved techniques rather than from better understanding of the limiting mechanisms. Theory and modeling are fairly well developed, and adequate to guide further asymptotic increases in performance of near conventional cells. There are several competitive cell designs with promise of higher performance ( 20%) but for these designs further improvements are required. The available cell processing technology to fabricate high efficiency cells is examined

Recent developments in thin silicon solar cells

Fifty micron thick cells 2x4 sq cm area with coplanar back contacts were made with good yield, and with output equivalent to conventional top/bottom contact cells of the same thickness. A wraparound junction (WAJ) design was selected, and used successfully. The low alpha cells delivered were all above 12%, the average efficiency was 13% and the best was 14%. The overall yield was 35 to 40%, comparable to that for conventional 50 micron cells. The process sequence was moderately complex, but showed good reproducibility. The CBC cells performed wall under several important environmental tests. High alpha CBC cells were made, with about 1% increase in conversion efficiency. The most important design criteria were the choice of back surface N+ and P+ areas

Silicon solar cell process development, fabrication and analysis

For UCP Si, randomly selected wafers and wafers cut from two specific ingots were studied. For the randomly selected wafers, a moderate gettering diffusion had little effect. Moreover, an efficiency up to 14% AMI was achieved with advanced processes. For the two specific UCP ingots, ingot #5848-13C displayed severe impurity effects as shown by lower 3sc in the middle of the ingot and low CFF in the top of the ingot. Also the middle portions of this ingot responded to a series of progressively more severe gettering diffusion. Unexplained was the fact that severely gettered samples of this ingot displayed a negative light biased effect on the minority carrier diffusion length while the nongettered or moderately gettered ones had the more conventional positive light biased effect on diffusion length. On the other hand, ingot C-4-21A did not have the problem of ingot 5848-13C and behaved like to the randomly selected wafers. The top half of the ingot was shown to be slightly superior to the bottom half, but moderate gettering helped to narrow the gap