5 research outputs found
Downscaling Effect on the Superconductivity of Pd<sub>3</sub>Bi<sub>2</sub>X<sub>2</sub> (X = S or Se) Nanoparticles Prepared by Microwave-Assisted Polyol Synthesis
Pd<sub>3</sub>Bi<sub>2</sub>S<sub>2</sub> and Pd<sub>3</sub>Bi<sub>2</sub>Se<sub>2</sub> have been successfully prepared in the form
of nanoparticles with diameters of ∼50 nm by microwave-assisted
modified polyol synthesis at low temperatures. The composition and
morphology of the samples have been studied by means of powder X-ray
diffraction as well as electron microscopy methods, including X-ray
intensity mapping on the nanoscale. Superconducting properties of
the as-prepared samples have been characterized by electrical resistivity
measurements down to low temperatures (∼0.2 K). Deviations
from the bulk metallic behavior originating from the submicrometer
nature of the samples were registered for both phases. A significant
critical-field enhancement up to 1.4 T, i.e., 4 times higher than
the value of the bulk material, has been revealed for Pd<sub>3</sub>Bi<sub>2</sub>Se<sub>2</sub>. At the same time, the critical temperature
is suppressed to 0.7 K from the bulk value of ∼1 K. A superconducting
transition at 0.4 K has been observed in nanocrystalline Pd<sub>3</sub>Bi<sub>2</sub>S<sub>2</sub>. Here, a zero-temperature upper critical
field of ∼0.5 T has been estimated. Further, spark plasma-sintered
Pd<sub>3</sub>Bi<sub>2</sub>S<sub>2</sub> and Pd<sub>3</sub>Bi<sub>2</sub>Se<sub>2</sub> samples have been investigated. Their superconducting
properties are found to lie between those of the bulk and nanosized
samples
Crystal Structure and Physical Properties of Ternary Phases around the Composition Cu<sub>5</sub>Sn<sub>2</sub>Se<sub>7</sub> with Tetrahedral Coordination of Atoms
A new monoclinic selenide Cu<sub>5</sub>Sn<sub>2</sub>Se<sub>7</sub> was synthesized, and its crystal
and electronic structure as well
as thermoelectric properties were studied. The crystal structure of
Cu<sub>5</sub>Sn<sub>2</sub>Se<sub>7</sub> was determined by electron
diffraction tomography and refined by full-profile techniques using
synchrotron X-ray powder diffraction data: space group <i>C</i>2, <i>a</i> = 12.6509(3) Ã…, <i>b</i> = 5.6642(2)
Å, <i>c</i> = 8.9319(4) Å, β = 98125(4)°, <i>Z</i> = 2; <i>T</i> = 295 K. Thermal analysis and
high-temperature synchrotron X-ray diffraction indicated the decomposition
of Cu<sub>5</sub>Sn<sub>2</sub>Se<sub>7</sub> at 800 K with formation
of the tetragonal high-temperature phase Cu<sub>4.90(4)</sub>Sn<sub>2.10(4)</sub>Se<sub>7</sub>: space group <i>I</i>4Ì…2<i>m</i>, <i>a</i> = 5.74738(1) Ã…, <i>c</i> = 11.45583(3) Ã…; <i>T</i> = 873 K. Both crystal structures
are superstructures to the sphalerite type with tetrahedral coordination
of the atoms. In agreement with chemical bonding analysis and band
structure calculations, Cu<sub>5</sub>Sn<sub>2</sub>Se<sub>7</sub> exhibits metal-like electronic transport behavior
Synthesis, Structure, and Properties of Two Zintl Phases around the Composition SrLiAs
Two
atomic arrangements were found near the equiatomic composition in
the strontium–lithium–arsenic system. Orthorhombic <i>o</i>-SrLiAs was synthesized by reaction of elemental components
at 950 °C, followed by annealing at 800 °C and subsequent
quenching in water. The hexagonal modification <i>h</i>-SrLi<sub>1–<i>x</i></sub>As was obtained from annealing of <i>o</i>-SrLiAs at 550 °C in dynamic vacuum. The structures
of both phases were determined by single-crystal X-ray diffraction: <i>o</i>-SrLiAs, structure type TiNiSi, space group <i>Pnma</i>, Pearson symbol <i>oP</i>12, <i>a</i> = 7.6458(2)
Ã…, <i>b</i> = 4.5158(1) Ã…, <i>c</i> =
8.0403(3) Å, <i>V</i> = 277.61(2) Å<sup>3</sup>, <i>R</i><sub>F</sub> = 0.028 for 558 reflections; <i>h</i>-SrLi<sub>1–<i>x</i></sub>As, structure
type ZrBeSi, space group <i>P</i>6<sub>3</sub>/<i>mmc</i>, Pearson symbol <i>hP</i>6, <i>a</i> = 4.49277(9)
Ã…, <i>c</i> = 8.0970(3) Ã…, <i>V</i> =
141.54(1) Ã…<sup>3</sup>, <i>R</i><sub>F</sub> = 0.026
for 113 reflections. The analysis of the electron density within the
framework of the quantum theory of atoms in molecules revealed a charge
transfer according to the Sr<sup>1.3+</sup>Li<sup>0.8+</sup>As<sup>2.1–</sup>, in agreement with the electronegativities of the
individual elements. The electron localizability indicator distribution
indicated the formation of a 3D anionic framework [LiAs] in <i>o</i>-SrLiAs and a rather 2D anionic framework [LiAs] in <i>h</i>-SrLi<sub>1–<i>x</i></sub>As. Magnetic
susceptibility measurements point to a diamagnetic character of both
phases, which verifies the calculated electronic density of states
Homo- and Heterovalent Substitutions in the New Clathrates I Si<sub>30</sub>P<sub>16</sub>Te<sub>8–<i>x</i></sub>Se<sub><i>x</i></sub> and Si<sub>30+<i>x</i></sub>P<sub>16–<i>x</i></sub>Te<sub>8–<i>x</i></sub>Br<sub><i>x</i></sub>: Synthesis, Crystal Structure, and Thermoelectric Properties
The new cationic clathrates I Si<sub>30</sub>P<sub>16</sub>Te<sub>8–<i>x</i></sub>Se<sub><i>x</i></sub> and
Si<sub>30+<i>x</i></sub>P<sub>16–<i>x</i></sub>Te<sub>8–<i>x</i></sub>Br<sub><i>x</i></sub> were synthesized by the standard ampule technique. The Si<sub>30</sub>P<sub>16</sub>Te<sub>8–<i>x</i></sub>Se<sub><i>x</i></sub> (<i>x</i> = 0–2.3) clathrates
crystallize in the cubic space group <i>Pm</i>3Ì…<i>n</i> with the unit cell parameter <i>a</i> ranging
from 9.9382(2) to 9.9696(1) Å. In the case of the Si<sub>30+x</sub>P<sub>16–<i>x</i></sub>Te<sub>8–<i>x</i></sub>Br<sub><i>x</i></sub> (<i>x</i> = 1–6.4)
clathrates, the lattice parameter varies from 9.9720(8) to 10.0405(1)
Å; at lower Si/P ratios (<i>x</i> = 1–3) the
ordering of bromine atoms induces the splitting of the guest positions
and causes the transformation from the space group <i>Pm</i>3Ì…<i>n</i> to <i>Pm</i>3Ì…. Irrespective
of the structure peculiarities, the normal temperature motion of the
guest atoms inside the oversized cages of the framework is observed.
The title clathrates possess very low thermal expansion coefficients
ranging from 6.6 × 10<sup>–6</sup> to 1.0 × 10<sup>–5</sup> K<sup>–1</sup> in the temperature range of
298–1100 K. The characteristic Debye temperature is about 490
K. Measurements of the electrical resistivity and thermopower showed
typical behavior of <i>p</i>-type thermally activated semiconductors,
whereas the temperature behavior of the thermal conductivity is glasslike
and in general consistent with the PGEC concept. The highest value
of the thermoelectric figure of merit (<i><i>ZT</i></i> = 0.1) was achieved for the Br-bearing clathrate Si<sub>32.1(2)</sub>P<sub>13.9(2)</sub>Te<sub>6.6(2)</sub>Br<sub>1.0(1)</sub> at 750 K
Homo- and Heterovalent Substitutions in the New Clathrates I Si<sub>30</sub>P<sub>16</sub>Te<sub>8–<i>x</i></sub>Se<sub><i>x</i></sub> and Si<sub>30+<i>x</i></sub>P<sub>16–<i>x</i></sub>Te<sub>8–<i>x</i></sub>Br<sub><i>x</i></sub>: Synthesis, Crystal Structure, and Thermoelectric Properties
The new cationic clathrates I Si<sub>30</sub>P<sub>16</sub>Te<sub>8–<i>x</i></sub>Se<sub><i>x</i></sub> and
Si<sub>30+<i>x</i></sub>P<sub>16–<i>x</i></sub>Te<sub>8–<i>x</i></sub>Br<sub><i>x</i></sub> were synthesized by the standard ampule technique. The Si<sub>30</sub>P<sub>16</sub>Te<sub>8–<i>x</i></sub>Se<sub><i>x</i></sub> (<i>x</i> = 0–2.3) clathrates
crystallize in the cubic space group <i>Pm</i>3Ì…<i>n</i> with the unit cell parameter <i>a</i> ranging
from 9.9382(2) to 9.9696(1) Å. In the case of the Si<sub>30+x</sub>P<sub>16–<i>x</i></sub>Te<sub>8–<i>x</i></sub>Br<sub><i>x</i></sub> (<i>x</i> = 1–6.4)
clathrates, the lattice parameter varies from 9.9720(8) to 10.0405(1)
Å; at lower Si/P ratios (<i>x</i> = 1–3) the
ordering of bromine atoms induces the splitting of the guest positions
and causes the transformation from the space group <i>Pm</i>3Ì…<i>n</i> to <i>Pm</i>3Ì…. Irrespective
of the structure peculiarities, the normal temperature motion of the
guest atoms inside the oversized cages of the framework is observed.
The title clathrates possess very low thermal expansion coefficients
ranging from 6.6 × 10<sup>–6</sup> to 1.0 × 10<sup>–5</sup> K<sup>–1</sup> in the temperature range of
298–1100 K. The characteristic Debye temperature is about 490
K. Measurements of the electrical resistivity and thermopower showed
typical behavior of <i>p</i>-type thermally activated semiconductors,
whereas the temperature behavior of the thermal conductivity is glasslike
and in general consistent with the PGEC concept. The highest value
of the thermoelectric figure of merit (<i><i>ZT</i></i> = 0.1) was achieved for the Br-bearing clathrate Si<sub>32.1(2)</sub>P<sub>13.9(2)</sub>Te<sub>6.6(2)</sub>Br<sub>1.0(1)</sub> at 750 K