Silicon Nanopillar Solar Cells Made by Near Field Phase-Shift Photolithography

A novel photolithographic technique which promises quick and easy large area patterning is explored to satisfy the nanowire applications requirements. Nanohole patterns for ordered nanowire growth and nanopillar arrays for PV applications are produced by means of Near Field Phase-Shift Photolithography. Furthermore, solar cells based on silicon nanopillars have been fabricated showing high e ciencies. The quality of di erent passivating materials was evaluated in this particular approach, concluding that a double layer of SiO2/SiNx is the most appropriate.Outgoin

Field-effect passivation on silicon nanowire solar cells

Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography (NF-PSL). We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiN (x) stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied

Silicon Nanopillar Solar Cells Made by Near Field Phase-Shift Photolithography

A novel photolithographic technique which promises quick and easy large area patterning is explored to satisfy the nanowire applications requirements. Nanohole patterns for ordered nanowire growth and nanopillar arrays for PV applications are produced by means of Near Field Phase-Shift Photolithography. Furthermore, solar cells based on silicon nanopillars have been fabricated showing high e ciencies. The quality of di erent passivating materials was evaluated in this particular approach, concluding that a double layer of SiO2/SiNx is the most appropriate.Outgoin

Enhanced second harmonic generation from InAs nano-wing structures on silicon

We demonstrate morphology-dependent second-harmonic generation (SHG) from InAs V-shaped nanomembranes. We show SHG correlation with the nano-wing shape and size, experimentally quantify the SHG efficiency, and demonstrate a maximum SHG enhancement of about 500 compared to the bulk. Experimental data are supported by rigorous calculations of local electromagnetic field spectra