Effect of Iron Deficiency Anemia on Intellectual Performance of Primary School Children in Islamabad, Pakistan

Purpose: To assess the differences, if any, in the intellectual performance scores of children who have iron deficiency anemia and those who are neither anemic nor iron-deficient in New Kashmir Model School, Islamabad, Pakistan.Methods: A total of 108 primary New Kashmir Model School children of Islamabad, Pakistan between the ages of 7 to 9 years were included in the study. They were divided into two groups based on Iron deficiency anemia and Non-anemia children’s. A brief clinical history and physical examination was performed. All the 5 mandatory subjects of WISC-R were administered to the children of both groups. Electronic cell counter was used for the evaluation of hemoglobin, packed cell volume (PVC), mean cell volume (MCV), Mean cell hemoglobin (MCH) while serum parameters were determined after first separating serum from blood. Giemsa stain was used to evaluate red cell morphology.Results: Seventy six of these children had iron deficiency anemia based on their hemoglobin, packed cell volume, serum iron, total iron binding capacity and serum ferritin levels. The remaining 32 children were neither anemic nor iron-deficient based on their profiles. Intellectual performance scores which comprised of central nervous system (CNS) impact, as well as hemoglobin, packed cell volume, serum iron, total iron binding capacity and serum ferritin levels and also clinical parameters for the iron deficiency anemia group, were significantly lower than those of the non-anemia group.Conclusion: Iron deficiency anemia appears to be associated with lower intellectual performance scores in school children. These results support previous findings that iron depletion leads to psychological and developmental effects in children.Keywords: Intellectual performance, Anemia, Children, Psychological and developmental effect

Raman theory of quantum wires. Evidence of ripples in Raman spectra of thin wall Si nanotubes

In the present paper we develop for the first time a general theory calculating the Raman spectrum of a quantum wire, using the phonon modes active in the wire. No Raman theory is at present available for quantum wires. In fact, to date only phenomenological models with arbitrary parameters, or unidimensional approaches have been published specifically for quantum dots. In our approach the confinement effects due to the reduced size are introduced directly by means of the Heisenberg Uncertainty Principle. The present theory, applied to silicon nanowires, permits the evaluation of Raman frequency shift and linewidth broadening as a function of the size. The results obtained by this model for Si nanowires are in close agreement with the few experimental data available in the literature. The model also shows evidence of ripples in the Raman spectra of thin wall Si nanotubes. This theory can be applied as well to any semiconductor of known phonon branches