Shot noise in resonant tunneling structures

We propose a quantum mechanical approach to noise in resonant tunneling structures, that can be applied in the whole range of transport regimes, from completely coherent to completely incoherent. In both limiting cases, well known results which have appeared in the literature are recovered. Shot noise reduction due to both Pauli exclusion and Coulomb repulsion, and their combined effect, are studied as a function of the rate of incoherent processes in the well (which are taken into account by means of a phenomenological relaxation time), and of temperature. Our approach allows the study of noise in a variety of operating conditions (i.e., equilibrium, sub-peak voltages, second resonance voltages), and as a function of temperature, explaining experimental results and predicting interesting new results.Comment: RevTeX file, 26 pages, 3 Postscript figures, uses epsf.sty. submitted to Phys. Rev.

Operation of Quantum Cellular Automaton cells with more than two electrons

We present evidence that operation of QCA (Quantum Cellular Automaton) cells with four dots is possible with an occupancy of 4N+2 electrons per cell (N being an integer). We show that interaction between cells can be described in terms of a revised formula for cell polarization, which is based only on the difference between diagonal occupancies. We validate our conjectures with full quantum simulations of QCA cells for a number of electrons varying from 2 to 6, using the Configuration-Interaction method.Comment: 4 pages, 4 figures included, submitted to AP

Enhanced shot noise in resonant tunneling: theory and experiment

We show that shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ``full'' shot noise. We provide experimental results showing a Fano factor up to 6.6, and show that it is a dramatic effect caused by electron-electron interaction through Coulomb force, enhanced by the particular shape of the density of states in the well. We also present numerical results from the proposed theory, which are in agreement with the experiment, demonstrating that the model accounts for the relevant physics involved in the phenomenon.Comment: 4 pages, 4 figure

Study of Warm Electron Injection in Double Gate SONOS by Full Band Monte Carlo Simulation

In this paper we investigate warm electron injection in a double gate SONOS memory by means of 2D full-band Monte Carlo simulations of the Boltzmann Transport Equation (BTE). Electrons are accelerated in the channel by a drain-to-source voltage VDS smaller than 3 V, so that programming occurs via electrons tunneling through a potential barrier whose height has been effectively reduced by the accumulated kinetic energy. Particle energy distribution at the semiconductor/oxide interface is studied for different bias conditions and different positions along the channel. The gate current is calculated with a continuum-based post-processing method as a function of the particle distribution obtained from Monte Carlo. Simulation results show that the gate current increases by several orders of magnitude with increasing drain bias and warm electron injection can be an interesting option for programming when short channel effects prohibit the application of larger drain bias

Thermal behavior of Quantum Cellular Automaton wires

We investigate the effect of a finite temperature on the behavior of logic circuits based on the principle of Quantum Cellular Automata (QCA) and of ground state computation. In particular, we focus on the error probability for a wire of QCA cells that propagates a logic state. A numerical model and an analytical, more approximate, model are presented for the evaluation of the partition function of such a system and, consequently, of the desired probabilities. We compare the results of the two models, assessing the limits of validity of the analytical approach, and provide estimates for the maximum operating temperature.Comment: 15 pages, 7 figures, uses revte

Simulation of a non-invasive charge detector for quantum cellular automata

Information in a Quantum Cellular Automata architecture is encoded in the polarizazion state of a cell, i.e., in the occupation numbers of the quantum dots of which the cell is made up. Non-invasive charge detectors of single electrons in a quantum dot are therefore needed, and recent experiments have shown that a quantum constriction electrostatically coupled to the quantum dot may be a viable solution. We have performed a numerical simulation of a system made of a quantum dot and a nearby quantum point contact defined, by means of depleting metal gates, in a two-dimensional electron gas at a GaAs/AlGaAs heterointerface. We have computed the occupancy of each dot and the resistance of the quantum wire as a function of the voltage applied to the plunger gate, and have derived design criteria for achieving optimal sensitivity.Comment: 8 pages, RevTeX, epsf, 5 figure

Simulation of hydrogenated graphene Field-Effect Transistors through a multiscale approach

In this work, we present a performance analysis of Field Effect Transistors based on recently fabricated 100% hydrogenated graphene (the so-called graphane) and theoretically predicted semi-hydrogenated graphene (i.e. graphone). The approach is based on accurate calculations of the energy bands by means of GW approximation, subsequently fitted with a three-nearest neighbor (3NN) sp3 tight-binding Hamiltonian, and finally used to compute ballistic transport in transistors based on functionalized graphene. Due to the large energy gap, the proposed devices have many of the advantages provided by one-dimensional graphene nanoribbon FETs, such as large Ion and Ion/Ioff ratios, reduced band-to-band tunneling, without the corresponding disadvantages in terms of prohibitive lithography and patterning requirements for circuit integration