17 research outputs found
Electrical properties of multiple-layer structures formed by implantation of nitrogen or oxygen and annealed under high pressure
Silicon-on-insulator-like structures formed in either oxygen- or
nitrogen-implanted silicon during anneals under atmospheric and enhanced
hydrostatic pressure are characterized by means of electrical techniques
(current-voltage and capacitance-voltage measurements). It was found
that the application of high pressure (similar to 1 GPa) stimulates the
formation of a perfect top silicon layer and results in the degradation
of the properties of the buried insulator. The latter effect is caused
by defect accumulation in the buried insulator and leads to a decrease
in the effective thickness of the insulator layer as extracted from
capacitance-voltage measurements. Pressure-stimulated formation of
electrically active centers (donors and acceptors) in the top silicon
layer and substrate was found. The fixed charge in the oxide was found
to be independent on the pressure applied during anneals, whereas the
negative charge in the nitride increased with pressure. (c) 2006
American Institute of Physics