Towards the development of an Inter-Cultural Scale to Measure Trust in Automation

Trust is conceived as an attitude leading to intentions resulting in user actions involving automation. It is generally believed that trust is dynamic and that a user’s prior experience with automation affects future behavior indirectly through causing changes in trust. Additionally, individual differences and cultural factors have been frequently cited as the contributors to influencing trust beliefs about using and monitoring automation. The presented research focuses on modeling human’s trust when interacting with automated systems across cultures. The initial trust assessment instrument, comprising 110 items along with 2 perceptions (general vs. specific use of automation), has been empirically validated. Detailed results comparing items and dimensionality with our new pooled measure will be presented

Relaxation Effects in the Transition Temperature of Superconducting HgBa2CuO4+delta

In previous studies on a number of under- and overdoped high temperature superconductors, including YBa_{2}Cu_{3}O_{7-y} and Tl_{2}Ba_{2}CuO_{6+\delta}, the transition temperature T_c has been found to change with time in a manner which depends on the sample's detailed temperature and pressure history. This relaxation behavior in T_c is believed to originate from rearrangements within the oxygen sublattice. In the present high-pressure studies on HgBa_{2}CuO_{4+\delta} to 0.8 GPa we find clear evidence for weak relaxation effects in strongly under- and overdoped samples ($T_c\simeq 40 - 50 K$) with an activation energy $E_{A}(1 bar) \simeq 0.8 - 0.9 eV$. For overdoped HgBa_{2}CuO_{4+\delta} E_{A} increases under pressure more rapidly than previously observed for YBa_{2}Cu_{3}O_{6.41}, yielding an activation volume of +11 \pm 5 cm^{3}; the dependence of T_c on pressure is markedly nonlinear, an anomalous result for high-T_c superconductors in the present pressure range, giving evidence for a change in the electronic and/or structural properties near 0.4 GPa

Ab initio study of the beta$-tin->Imma->sh phase transitions in silicon and germanium

We have investigated the structural sequence of the high-pressure phases of silicon and germanium. We have focussed on the cd->beta-tin->Imma->sh phase transitions. We have used the plane-wave pseudopotential approach to the density-functional theory implemented within the Vienna ab-initio simulation package (VASP). We have determined the equilibrium properties of each structure and the values of the critical parameters including a hysteresis effect at the phase transitions. The order of the phase transitions has been obtained alternatively from the pressure dependence of the enthalpy and of the internal structure parameters. The commonly used tangent construction is shown to be very unreliable. Our calculations identify a first-order phase transition from the cd to the beta-tin and from the Imma to the sh phase, and they indicate the possibility of a second-order phase-transition from the beta-tin to the Imma phase. Finally, we have derived the enthalpy barriers between the phases.Comment: 12 pages, 16 figure

NEW PHASES OF SEMICONDUCTORS AT ULTRAHIGH PRESSURE

Des mesures de diffraction X ont été faites sur Ge, Si, Gap et InAs à très haute pression dans un dispositif à enclumes de diamant. Trois phases de Si (β- Sn, hexagonal simple, hexagonal compact) ont été identifiées,à pression croissante, ainsi qu'une phase cubique centrée à la décompression. InAs se transforme en une phase NaCl sous haute pression, avec une hystérésis lors du retour à la structure blende d'origine. Des expériences sur Gap en milieu quasi-hydrostatique localisent la pression de transition bien au-dessus de 22 GPa en accord avec le travail précédent de Pinceaux, Besson, Rimsky et WeillX-ray diffraction experiments have been carried out on Ge, Si, Gap, InAs at ultrahigh pressure in the diamond anvil high pressure apparatus. Three phases of Si (β-Sn, simple hexagonal, hcp) have been found on increase of pressure, with bcc phase on release. Only one phase of Ge (β-Sn) has been found to 25 GPa, with tetragonal phase on release. InAs transforms to NaCl phase at high pressure, with some hysteresis in the transformation back to the original zinc-blend phase. Experiments on Gap in a quasi-hydrostatic medium place the transition pressure well above 22 GPa, in agreement with previous work of Pinceaux, Besson, Rimsky, and Weill