Monolithic integration of an injection laser and a metal semiconductor field effect transistor

A new laser structure, the "T-laser", has been monolithically integrated with a MESFET on a semi-insulating GaAs substrate. Integration is achieved by means of a compatible structure in which the optically active layer of the laser also serves as the electrically active layer of the MESFET. Direct modulation of the laser by means of the transistor is demonstrated

GaAs-GaAIAs injection lasers on semi-insulating substrates using laterally diffused junctions

Low‐threshold GaAs‐GaAlAs lasers operating in a stable single mode have been fabricated using laterally diffused junctions. The lasers are fabricated on semi‐insulating substrates and can be integrated with other components

Integration of an injection laser with a Gunn oscillator on a semi-insulating GaAs substrates

The integration of an injection semiconductor laser with an active electronic device (Gunn oscillator) in a single epitaxial crystal device is demonstrated

High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate

A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65%). The diode is suitable for monolithic integration with other optoelectronic devices

Monolithic optoelectronic integration of a GaAlAs laser, a field-effect transistor, and a photodiode

A low threshold buried heterostructure laser, a metal-semiconductor field-effect transistor, and a p-i-n photodiode have been integrated on a semi-insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz

Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater

A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate. This integrated optoelectronic circuit (IOEC) was operated as a rudimentary optical repeater. The incident optical signal is detected by the photodiode, amplified by the MESFET, and converted back to light by the laser. The gain bandwidth product of the repeater was measured to be 178 MHz

Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequencies

Experimental and theoretical studies indicate that a high-frequency laser with bandwidths up to X-band frequencies (~> 10 GHz) should be one having a short cavity with a window structure, and preferably operating at low temperatures. These designs would accomplish the task of shortening the photon lifetime, increasing the intrinsic optical gain, and increasing the internal photon density without inflicting mirror damage. A modulation bandwidth of >8 GHz has been achieved using a 120-µm laser without any special window structure at room temperature

Superluminescent damping of relaxation resonance in the modulation response of GaAs lasers

It is demonstrated experimentally that the intrinsic modulation response of injection lasers can be modified by reducing mirror reflectivities, which leads to suppression of relaxation oscillation resonance and a reduction of nonlinear distortions up to multi-GHz frequencies. A totally flat response with a 3-dB bandwidth of 5 GHz was obtained using antireflection coated buried heterostructure lasers fabricated on a semi-insulating substrate. Harmonic distortions were below 40 dB within the entire 3-dB bandwidth. These results are in accord with theoretical predictions based on an analysis which include the effects of superluminescence in the laser cavity