2,193 research outputs found

    Angular distributions in J/ψppˉπ0(η)J/\psi\to p\bar{p}\pi^{0}(\eta) decays

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    The differential decay rates of the processes J/ψppˉπ0J/\psi\to p\bar{p}\pi^{0} and J/ψppˉηJ/\psi\to p\bar{p}\eta close to the ppˉp\bar{p} threshold are calculated with the help of the NNˉN\bar{N} optical potential. The same calculations are made for the decays of ψ(2S)\psi(2S). We use the potential which has been suggested to fit the cross sections of NNˉN\bar{N} scattering together with NNˉN\bar{N} and six pion production in e+ee^{+}e^{-} annihilation close to the ppˉp\bar{p} threshold. The ppˉp\bar{p} invariant mass spectra is in agreement with the available experimental data. The anisotropy of the angular distributions, which appears due to the tensor forces in the NNˉN\bar{N} interaction, is predicted close to the ppˉp\bar{p} threshold. This anisotropy is large enough to be investigated experimentally. Such measurements would allow one to check the accuracy of the model of NNˉN\bar{N} interaction.Comment: 10 pages, 8 figure

    Properties of discrete breathers in graphane from ab initio simulations

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    A density functional theory (DFT) study of the discrete breathers (DBs) in graphane (fully hydrogenated graphene) was performed. To the best of our knowledge, this is the first demonstration of the existence of DBs in a crystalline body from the first-principle simulations. It is found that the DB is a robust, highly localized vibrational mode with one hydrogen atom oscillating with a large amplitude along the direction normal to the graphane plane with all neighboring atoms having much smaller vibration amplitudes. DB frequency decreases with increase in its amplitude, and it can take any value within the phonon gap and can even enter the low-frequency phonon band. The concept of DB is then used to propose an explanation to the recent experimental results on the nontrivial kinetics of graphane dehydrogenation at elevated temperatures.Comment: 20.07.14 Submitted to PhysRev

    AC Josephson properties of phase slip lines in wide tin films

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    Current steps in the current-voltage characteristics of wide superconducting Sn films exposed to a microwave irradiation were observed in the resistive state with phase slip lines. The behaviour of the magnitude of the steps on the applied irradiation power was found to be similar to that for the current steps in narrow superconducting channels with phase slip centers and, to some extent, for the Shapiro steps in Josephson junctions. This provides evidence for the Josephson properties of the phase slip lines in wide superconducting films and supports the assumption about similarity between the processes of phase slip in wide and narrow films.Comment: 7 pages, 2 figures, to be published in Supercond. Sci. Techno
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