Development of 3D detectors at FBK-irst

We report on the development of 3D detectors at Fondazione Bruno Kessler - irst in the framework of the CERN RD-50 Collaboration. Technological and design aspects dealing with the 3D Single Type Column detectors are reviewed, and selected results from the electrical and functional characterization of prototypes are reported and discussed. A new detector concept, namely 3D Double-side Double Type Column detectors, allowing for significant performance enhancement while maintaining a reasonable process complexity, is final ly addressed

The SuperB Silicon Vertex Tracker

SuperB is an asymmetric electron-positron collider planned to operate at very high luminosity ( 1036cm 122s 121) around the \u3a5(4S) peak and in an energy range from the \u3c4/charm threshold to the \u3a5(5S). It is an evolution of the SLAC PEP-II collider and its detector, BaBar. This paper describes the Silicon Vertex Tracker (SVT), one of the key elements of the SuperB detector, concentrating on the modifications and improvements adopted on the strip sensors for the external layers and on the baseline option for the innermost layer (Layer0), a thin (200 \u3bcm) double-sided silicon detector with short strips ("Striplets"), oriented at $\pm$45\u25e6 angle to the detector's edge

Radiation damage of silicon structures with electrons of 900 MeV

We present first results on the irradiation of double-sided silicon microstrip detectors and test structures performed at the Elettra synchrotron radiation facility at Trieste, Italy. The devices were irradiated with 900 MeV electrons. The test structures we used for studying bulk, surface and oxide irradiation damage were guard ring diodes, gated diodes and MOS capacitors. The test structures and the double-sided microstrip detectors were produced by Micron Semiconductor Ltd. (England) and IRST (Trento, Italy). For the first time, bulk-type inversion is observed to occur after high-energy electron irradiation. Current and inter-strip resistance measurements performed on the microstrip detectors show that the devices are still usable after type inversion. (C) 2002 Elsevier Science B.V. All rights reserved

Development of a fabrication technology for double-sided AC-coupled silicon microstrip detectors

NUCL. INSTR. AND METH.