Search for spin gapless semiconductors: The case of inverse Heusler compounds

We employ ab-initio electronic structure calculations to search for spin gapless semiconductors, a recently identified new class of materials, among the inverse Heusler compounds. The occurrence of this property is not accompanied by a general rule and results are materials specific. The six compounds identified show semiconducting behavior concerning the spin-down band structure and in the spin-up band structure the valence and conduction bands touch each other leading to 100% spin-polarized carriers. Moreover these six compounds should exhibit also high Curie temperatures and thus are suitable for spintronics applications.Comment: Submitted to Applied Physics Letter

Linear bands, zero-momentum Weyl semimetal, and topological transition in skutterudite-structure pnictides

It was reported earlier [Phys. Rev. Lett. 106, 056401 (2011)] that the skutterudite structure compound CoSb$_3$ displays a unique band structure with a topological transition versus a symmetry-preserving sublattice (Sb) displacement very near the structural ground state. The transition is through a massless Dirac-Weyl semimetal, point Fermi surface phase which is unique in that (1) it appears in a three dimensional crystal, (2) the band critical point occurs at $k$=0, and (3) linear bands are degenerate with conventional (massive) bands at the critical point (before inclusion of spin-orbit coupling). Further interest arises because the critical point separates a conventional (trivial) phase from a topological phase. In the native cubic structure this is a zero-gap topological semimetal; we show how spin-orbit coupling and uniaxial strain converts the system to a topological insulator (TI). We also analyze the origin of the linear band in this class of materials, which is the characteristic that makes them potentially useful in thermoelectric applications or possibly as transparent conductors. We characterize the formal charge as Co$^{+}$ $d^8$, consistent with the gap, with its $\bar{3}$ site symmetry, and with its lack of moment. The Sb states are characterized as $p_x$ (separately, $p_y$) $\sigma$-bonded $Sb_4$ ring states occupied and the corresponding antibonding states empty. The remaining (locally) $p_z$ orbitals form molecular orbitals with definite parity centered on the empty $2a$ site in the skutterudite structure. Eight such orbitals must be occupied; the one giving the linear band is an odd orbital singlet $A_{2u}$ at the zone center. We observe that the provocative linearity of the band within the gap is a consequence of the aforementioned near-degeneracy, which is also responsible for the small band gap.Comment: 10 pages, 7 figure

Band structure of semiconductors

Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillati

Conditions for spin-gapless semiconducting behavior in Mn2CoAl inverse Heusler compound

Employing ab initio electronic structure calculations, we investigate the conditions for spin-gapless semiconducting (SGS) behavior in the inverse Mn2 CoAl Heusler compound. We show that tetragonalization of the lattice, which can occur during films growth, keeps the SGS character of the perfect cubic compound. On the contrary, atomic swaps even between sites with different local symmetry destroy the SGS character giving rise to a half-metallic state. Furthermore, the occurrence of Co-surplus leads also to half-metallicity. Thus, we propose that in order to achieve SGS behavior during the growth of Mn2 CoAl (and similar SGS Heusler compounds) thin films, one should minimize the occurrence of defects, while small deformations of the lattice, due to the lattice mismatch with the substrate, do not play a crucial role