70 research outputs found
Current induced domain wall dynamics in the presence of spin orbit torques
Current induced domain wall (DW) motion in perpendicularly magnetized
nanostripes in the presence of spin orbit torques is studied. We show using
micromagnetic simulations that the direction of the current induced DW motion
and the associated DW velocity depend on the relative values of the field like
torque (FLT) and the Slonczewski like torques (SLT). The results are well
explained by a collective coordinate model which is used to draw a phase
diagram of the DW dynamics as a function of the FLT and the SLT. We show that a
large increase in the DW velocity can be reached by a proper tuning of both
torques.Comment: 9 pages, 3 figure
Modulating spin transfer torque switching dynamics with two orthogonal spin-polarizers by varying the cell aspect ratio
We study in-plane magnetic tunnel junctions with additional perpendicular
polarizer for subnanosecond-current-induced switching memories. The
spin-transfer-torque switching dynamics was studied as a function of the cell
aspect ratio both experimentally and by numerical simulations using the
macrospin model. We show that the anisotropy field plays a significant role in
the dynamics, along with the relative amplitude of the two spin-torque
contributions. This was confirmed by micromagnetic simulations. Real-time
measurements of the reversal were performed with samples of low and high aspect
ratio. For low aspect ratios, a precessional motion of the magnetization was
observed and the effect of temperature on the precession coherence was studied.
For high aspect ratios, we observed magnetization reversals in less than 1 ns
for high enough current densities, the final state being controlled by the
current direction in the magnetic tunnel junction cell.Comment: 6 pages, 7 figure
Field-free all-optical switching and electrical read-out of Tb/Co-based magnetic tunnel junctions
Switching of magnetic tunnel junction using femto-second laser enables a
possible path for THz frequency memory operation, which means writing speeds 2
orders of magnitude faster than alternative electrical approaches based on spin
transfer or spin orbit torque. In this work we demonstrate successful
field-free 50fs single laser pulse driven magnetization reversal of [Tb/Co]
based storage layer in a perpendicular magnetic tunnel junction. The
nanofabricated magnetic tunnel junction devices have an optimized bottom
reference electrode and show Tunnel Magnetoresistance Ratio values (TMR) up to
74\% after patterning down to sub-100nm lateral dimensions. Experiments on
continuous films reveal peculiar reversal patterns of concentric rings with
opposite magnetic directions, above certain threshold fluence. These rings have
been correlated to patterned device switching probability as a function of the
applied laser fluence. Moreover, the magnetization reversal is independent on
the duration of the laser pulse. According to our macrospin model, the
underlying magnetization reversal mechanism can be attributed to an in-plane
reorientation of the magnetization due to a fast reduction of the out-of-plane
uniaxial anisotropy. These aspects are of great interest both for the physical
understanding of the switching phenomenon and their consequences for
all-optical-switching memory devices, since they allow for a large fluence
operation window with high resilience to pulse length variability
Domain wall tilting in the presence of the Dzyaloshinskii-Moriya interaction in out-of-plane magnetized magnetic nanotracks
We show that the Dzyaloshinskii-Moriya interaction (DMI) can lead to a
tilting of the domain wall (DW) surface in perpendicularly magnetized magnetic
nanotracks when DW dynamics is driven by an easy axis magnetic field or a spin
polarized current. The DW tilting affects the DW dynamics for large DMI and the
tilting relaxation time can be very large as it scales with the square of the
track width. The results are well explained by an analytical model based on a
Lagrangian approach where the DMI and the DW tilting are included. We propose a
simple way to estimate the DMI in a magnetic multilayers by measuring the
dependence of the DW tilt angle on a transverse static magnetic field. Our
results shed light on the current induced DW tilting observed recently in Co/Ni
multilayers with inversion asymmetry, and further support the presence of DMI
in these systems.Comment: 12 pages, 3 figures, 1 Supplementary Material
In plane reorientation induced single laser pulse magnetization reversal in rare-earth based multilayer
Single Pulse All Optical Helicity Independent Switching (AO-HIS) represents
the ability to reverse the magnetic moment of a nanostructure using a
femtosecond single laser pulse. It is an ultrafast method to manipulate
magnetization without the use of any applied field. Since the first switching
experiments carried on GdFeCo ferrimagnetic systems, single pulse AO-HIS has
been restricted for a while to Gd-based alloys or Gd/FM bilayers where FM is a
ferromagnetic layer. Only recently has AO-HIS been extended to a few other
materials: MnRuGa ferrimagnetic Heusler alloys and Tb/Co multilayers with a
very specific range of thickness and composition. Here, we demonstrate that
single pulse AO-HIS observed in Tb/Co results from a different mechanism than
the one for Gd based samples and that it can be obtained for a large range of
rare earth-transition metal (RE-TM) multilayers, making this phenomenon much
more general. Surprisingly, in this large family of (RE-TM) multilayer systems,
the threshold fluence for switching is observed to be independent of the pulse
duration, up to at least 12 ps. Moreover, at high laser intensities, concentric
ring domain structures are induced, unveiling multiple fluence thresholds.
These striking switching features, which are in contrast to those of AO-HIS in
GdFeCo alloys, concomitant with the demonstration of an in-plane reorientation
of the magnetization, point towards an intrinsic precessional reversal
mechanism. Our results allow expanding the variety of materials with tunable
magnetic properties that can be integrated in complex heterostructures and
provide a pathway to engineer materials for future applications based on
all-optical control of magnetic order
Temperature dependence of the emission linewidth in MgO-based spin torque nano-oscillators
Spin transfer driven excitations in magnetic nanostructures are characterized
by a relatively large microwave emission linewidth (10 -100 MHz). Here we
investigate the role of thermal fluctuations as well as of the non-linear
amplitude-phase coupling parameter and the amplitude relaxation rate to explain
the linewidth broadening of in-plane precession modes induced in planar
nanostructures. Experiments on the linewidth broadening performed on MgO based
magnetic tunnel junctions are compared to the linewidth obtained from macrospin
simulations and from evaluation of the phase variance. In all cases we find
that the linewidth varies linearly with temperature when the amplitude
relaxation rate is of the same order as the linewidth and when the
amplitude-phase coupling parameter is relatively small. The small
amplitude-phase coupling parameter means that the linewidth is dominated by
direct phase fluctuations and not by amplitude fluctuations, explaining thus
its linear dependence as a function of temperature
Dipolar coupled core-shell perpendicular shape anisotropy MTJ with enhanced write speed and reduced cross-talk
11 pages, 11 figures,The concept of Perpendicular Shape-Anisotropy Spin-Transfer-Torque Magnetic Random-Access Memory tackles the downsize scalability limit of conventional ultrathin magnetic tunnel junctions (MTJ) below sub-20 nm technological nodes. This concept uses a thicker storage layer with a vertical aspect ratio, enhancing the thermal stability factor thanks to the favorable contribution of the shape anisotropy. However, the increased aspect ratio comes with an increase in switching time under applied voltage and the cross-over to non-uniform reversal mechanism at higher aspect ratio, limiting the gain in scalability. Additionally, the larger volume of the magnetic cell significantly increases the stray field acting on the neighboring devices compared to thin MTJs. In this work, we propose the use of a dipolar-coupled core-shell system as a storage layer. This improves both bottlenecks, as predicted by micromagnetic simulations for magnetisation reversal, and a macrospin model to estimate the stray field in a dense array
Spintronic memristors for neuromorphic circuits based on the angular variation of tunnel magnetoresistance
International audienceIn this study, a new type of compact magnetic memristor is demonstrated
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